Effects of oxygen flow rate on the properties of HfO 2 layers grown by metalorganic molecular beam epitaxy

Tae Hyoung Moon, Jae Min Myoung

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The investigations on the properties of HfO 2 dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C 4 H 9 O) 4 was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance-voltage (C-V) and current-voltage (I-V) analyses. As an experimental variable, the O 2 flow rate was changed from 2 to 8 seem while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO 2 layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C-V analyses, k = 14-16 and EOT = 44-52 were obtained, and the current densities of (3.2-3.3) × 10 -3 A/cm 2 were measured at - 1.5 V gate voltage from the I-V analyses.

Original languageEnglish
Pages (from-to)197-203
Number of pages7
JournalApplied Surface Science
Volume240
Issue number1-4
DOIs
Publication statusPublished - 2005 Feb 15

Fingerprint

Molecular beam epitaxy
Flow rate
Oxygen
Electric potential
Capacitance
Hafnium
X ray photoelectron spectroscopy
High resolution transmission electron microscopy
Binding energy
Oxides
Charge transfer
Atomic force microscopy
Current density
Crystal structure
Microstructure

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

@article{24a27aea0ca747409686a8f0b969195f,
title = "Effects of oxygen flow rate on the properties of HfO 2 layers grown by metalorganic molecular beam epitaxy",
abstract = "The investigations on the properties of HfO 2 dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C 4 H 9 O) 4 was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance-voltage (C-V) and current-voltage (I-V) analyses. As an experimental variable, the O 2 flow rate was changed from 2 to 8 seem while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO 2 layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C-V analyses, k = 14-16 and EOT = 44-52 were obtained, and the current densities of (3.2-3.3) × 10 -3 A/cm 2 were measured at - 1.5 V gate voltage from the I-V analyses.",
author = "Moon, {Tae Hyoung} and Myoung, {Jae Min}",
year = "2005",
month = "2",
day = "15",
doi = "10.1016/j.apsusc.2004.06.061",
language = "English",
volume = "240",
pages = "197--203",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

Effects of oxygen flow rate on the properties of HfO 2 layers grown by metalorganic molecular beam epitaxy . / Moon, Tae Hyoung; Myoung, Jae Min.

In: Applied Surface Science, Vol. 240, No. 1-4, 15.02.2005, p. 197-203.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of oxygen flow rate on the properties of HfO 2 layers grown by metalorganic molecular beam epitaxy

AU - Moon, Tae Hyoung

AU - Myoung, Jae Min

PY - 2005/2/15

Y1 - 2005/2/15

N2 - The investigations on the properties of HfO 2 dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C 4 H 9 O) 4 was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance-voltage (C-V) and current-voltage (I-V) analyses. As an experimental variable, the O 2 flow rate was changed from 2 to 8 seem while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO 2 layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C-V analyses, k = 14-16 and EOT = 44-52 were obtained, and the current densities of (3.2-3.3) × 10 -3 A/cm 2 were measured at - 1.5 V gate voltage from the I-V analyses.

AB - The investigations on the properties of HfO 2 dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C 4 H 9 O) 4 was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance-voltage (C-V) and current-voltage (I-V) analyses. As an experimental variable, the O 2 flow rate was changed from 2 to 8 seem while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO 2 layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C-V analyses, k = 14-16 and EOT = 44-52 were obtained, and the current densities of (3.2-3.3) × 10 -3 A/cm 2 were measured at - 1.5 V gate voltage from the I-V analyses.

UR - http://www.scopus.com/inward/record.url?scp=10444280807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10444280807&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2004.06.061

DO - 10.1016/j.apsusc.2004.06.061

M3 - Article

AN - SCOPUS:10444280807

VL - 240

SP - 197

EP - 203

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -