Effects of p- and d-block metal co-substitution on the electronic structure and physicochemical properties of InMO4 (M = Nb and Ta) semiconductors

Seung Tae Lim; Tae Woo Kim; Su Gil Hur; Seong Ju Hwang; Hyunwoong Park; Wonyong Choi; Jin Ho Choy

doi:10.1016/j.cplett.2006.12.030

Effects of p- and d-block metal co-substitution on the electronic structure and physicochemical properties of InMO₄ (M = Nb and Ta) semiconductors

Seung Tae Lim, Tae Woo Kim, Su Gil Hur, Seong Ju Hwang, Hyunwoong Park, Wonyong Choi, Jin Ho Choy

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We have investigated the effect of the co-substitution of Sn^IV and Ni^II ions on the electronic structure and physicochemical property of InMO₄ (M = Nb, Ta) semiconductors. The co-substitution leads to a red-shift of absorption edge as well as to an appearance of satellite peak below the absorption edge. Depending on the nature of valence orbitals, the substitution of p- and d-block elements results in the lowering of conduction band and the formation of impurity states in the middle of bandgap, respectively. Such a band modification makes the photocatalytic activity of InMO₄ improved against the photodegradation of organic molecules.

Original language	English
Pages (from-to)	251-255
Number of pages	5
Journal	Chemical Physics Letters
Volume	434
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2006.12.030
Publication status	Published - 2007 Feb 5

Bibliographical note

Funding Information:
This research (Letter) was performed for the Hydrogen Energy R&D Center, one of the 21st Century Frontier R&D Program, funded by the Ministry of Science and Technology of Korea, and partly by the financial support by Ministry of Environment (Grant No.: 022-061-023). The experiments at PLS were supported in part by MOST and POSTECH.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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abstract = "We have investigated the effect of the co-substitution of SnIV and NiII ions on the electronic structure and physicochemical property of InMO4 (M = Nb, Ta) semiconductors. The co-substitution leads to a red-shift of absorption edge as well as to an appearance of satellite peak below the absorption edge. Depending on the nature of valence orbitals, the substitution of p- and d-block elements results in the lowering of conduction band and the formation of impurity states in the middle of bandgap, respectively. Such a band modification makes the photocatalytic activity of InMO4 improved against the photodegradation of organic molecules.",

author = "Lim, {Seung Tae} and Kim, {Tae Woo} and Hur, {Su Gil} and Hwang, {Seong Ju} and Hyunwoong Park and Wonyong Choi and Choy, {Jin Ho}",

note = "Funding Information: This research (Letter) was performed for the Hydrogen Energy R&D Center, one of the 21st Century Frontier R&D Program, funded by the Ministry of Science and Technology of Korea, and partly by the financial support by Ministry of Environment (Grant No.: 022-061-023). The experiments at PLS were supported in part by MOST and POSTECH. ",

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Effects of p- and d-block metal co-substitution on the electronic structure and physicochemical properties of InMO₄ (M = Nb and Ta) semiconductors. / Lim, Seung Tae; Kim, Tae Woo; Hur, Su Gil; Hwang, Seong Ju; Park, Hyunwoong; Choi, Wonyong; Choy, Jin Ho.

In: Chemical Physics Letters, Vol. 434, No. 4-6, 05.02.2007, p. 251-255.

Research output: Contribution to journal › Article › peer-review

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AU - Lim, Seung Tae

AU - Kim, Tae Woo

AU - Hur, Su Gil

AU - Hwang, Seong Ju

AU - Park, Hyunwoong

AU - Choi, Wonyong

AU - Choy, Jin Ho

N1 - Funding Information: This research (Letter) was performed for the Hydrogen Energy R&D Center, one of the 21st Century Frontier R&D Program, funded by the Ministry of Science and Technology of Korea, and partly by the financial support by Ministry of Environment (Grant No.: 022-061-023). The experiments at PLS were supported in part by MOST and POSTECH.

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