Effects of Parasitic Resistance on the Performance of Silicon Avalanche Photodetectors in Standard CMOS Technology

Myung Jae Lee; Woo Young Choi

doi:10.1109/LED.2015.2496559

Effects of Parasitic Resistance on the Performance of Silicon Avalanche Photodetectors in Standard CMOS Technology

Myung Jae Lee, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We investigate the effects of parasitic resistance on the performance of silicon avalanche photodetectors (APDs) fabricated in the standard complementary metal-oxide-semiconductor (CMOS) technology. Two types of CMOS-APDs based on the P⁺/N-well junction having two different parasitic resistances are realized, and their current-voltage characteristics, responsivities, avalanche gains, photodetection frequency responses, and electrical reflection coefficients are measured and compared. In addition, the effect of parasitic resistance on the photodetection bandwidth is analyzed with an equivalent circuit model. It is clearly demonstrated that the parasitic resistance has great effects on the gain and photodetection bandwidth of CMOS-APDs.

Original language	English
Article number	7312931
Pages (from-to)	60-63
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	1
DOIs	https://doi.org/10.1109/LED.2015.2496559
Publication status	Published - 2016 Jan

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "We investigate the effects of parasitic resistance on the performance of silicon avalanche photodetectors (APDs) fabricated in the standard complementary metal-oxide-semiconductor (CMOS) technology. Two types of CMOS-APDs based on the P+/N-well junction having two different parasitic resistances are realized, and their current-voltage characteristics, responsivities, avalanche gains, photodetection frequency responses, and electrical reflection coefficients are measured and compared. In addition, the effect of parasitic resistance on the photodetection bandwidth is analyzed with an equivalent circuit model. It is clearly demonstrated that the parasitic resistance has great effects on the gain and photodetection bandwidth of CMOS-APDs.",

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AB - We investigate the effects of parasitic resistance on the performance of silicon avalanche photodetectors (APDs) fabricated in the standard complementary metal-oxide-semiconductor (CMOS) technology. Two types of CMOS-APDs based on the P+/N-well junction having two different parasitic resistances are realized, and their current-voltage characteristics, responsivities, avalanche gains, photodetection frequency responses, and electrical reflection coefficients are measured and compared. In addition, the effect of parasitic resistance on the photodetection bandwidth is analyzed with an equivalent circuit model. It is clearly demonstrated that the parasitic resistance has great effects on the gain and photodetection bandwidth of CMOS-APDs.

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Effects of Parasitic Resistance on the Performance of Silicon Avalanche Photodetectors in Standard CMOS Technology

Abstract

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