Effects of Parasitic Resistance on the Performance of Silicon Avalanche Photodetectors in Standard CMOS Technology

Myung Jae Lee, Woo Young Choi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigate the effects of parasitic resistance on the performance of silicon avalanche photodetectors (APDs) fabricated in the standard complementary metal-oxide-semiconductor (CMOS) technology. Two types of CMOS-APDs based on the P+/N-well junction having two different parasitic resistances are realized, and their current-voltage characteristics, responsivities, avalanche gains, photodetection frequency responses, and electrical reflection coefficients are measured and compared. In addition, the effect of parasitic resistance on the photodetection bandwidth is analyzed with an equivalent circuit model. It is clearly demonstrated that the parasitic resistance has great effects on the gain and photodetection bandwidth of CMOS-APDs.

Original languageEnglish
Article number7312931
Pages (from-to)60-63
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number1
DOIs
Publication statusPublished - 2016 Jan

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Silicon
Photodetectors
Metals
Bandwidth
Current voltage characteristics
Equivalent circuits
Frequency response
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Effects of Parasitic Resistance on the Performance of Silicon Avalanche Photodetectors in Standard CMOS Technology. / Lee, Myung Jae; Choi, Woo Young.

In: IEEE Electron Device Letters, Vol. 37, No. 1, 7312931, 01.2016, p. 60-63.

Research output: Contribution to journalArticle

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