Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters

Young Joon Yoon, Gi Bum Kim, Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik

Research output: Contribution to conferencePaper

Abstract

Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increased of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.

Original languageEnglish
Pages314-315
Number of pages2
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: 1998 Jul 191998 Jul 24

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period98/7/1998/7/24

Fingerprint

field emission
emitters
cobalt
silicon
electron emission

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

Cite this

Yoon, Y. J., Kim, G. B., Chi, E. J., Shim, J. Y., & Baik, H. K. (1998). Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters. 314-315. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .
Yoon, Young Joon ; Kim, Gi Bum ; Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Hong Koo. / Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .2 p.
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abstract = "Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increased of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.",
author = "Yoon, {Young Joon} and Kim, {Gi Bum} and Chi, {Eung Joon} and Shim, {Jae Yeob} and Baik, {Hong Koo}",
year = "1998",
month = "12",
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language = "English",
pages = "314--315",
note = "Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC ; Conference date: 19-07-1998 Through 24-07-1998",

}

Yoon, YJ, Kim, GB, Chi, EJ, Shim, JY & Baik, HK 1998, 'Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters' Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 98/7/19 - 98/7/24, pp. 314-315.

Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters. / Yoon, Young Joon; Kim, Gi Bum; Chi, Eung Joon; Shim, Jae Yeob; Baik, Hong Koo.

1998. 314-315 Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters

AU - Yoon, Young Joon

AU - Kim, Gi Bum

AU - Chi, Eung Joon

AU - Shim, Jae Yeob

AU - Baik, Hong Koo

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increased of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.

AB - Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increased of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.

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M3 - Paper

SP - 314

EP - 315

ER -

Yoon YJ, Kim GB, Chi EJ, Shim JY, Baik HK. Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters. 1998. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .