Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters

Young Joon Yoon, Gi Bum Kim, Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik

Research output: Contribution to conferencePaper

Abstract

Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increased of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.

Original languageEnglish
Pages314-315
Number of pages2
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: 1998 Jul 191998 Jul 24

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period98/7/1998/7/24

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

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    Yoon, Y. J., Kim, G. B., Chi, E. J., Shim, J. Y., & Baik, H. K. (1998). Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters. 314-315. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .