Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistors

Hwa Sung Lee, Jeong Ho Cho, Woong Kwon Kim, Jong Lam Lee, Kilwon Cho

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report that treating indium tin oxide (ITO) source and drain electrodes with ozone or oxygen (O2) plasma enhances the hole injection from these electrodes to pentacene semiconductor, thereby improving the performance of pentacene thin-film transistors. Synchrotron radiation photoelectron spectroscopy results showed that the ozone and O2 plasma treatments of the electrodes increased their work functions by about 0.4 and 1.0 eV, respectively, compared to the as-deposited ITO electrode. These increases in work function were found to lower the hole injection barrier, producing remarkable increases in the field-effect mobility.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume10
Issue number8
DOIs
Publication statusPublished - 2007 Jun 20

Fingerprint

Thin film transistors
Tin oxides
indium oxides
Indium
tin oxides
Electric properties
transistors
electrical properties
Electrodes
electrodes
Ozone
thin films
ozone
injection
Plasmas
oxygen plasma
Photoelectron spectroscopy
Synchrotron radiation
synchrotron radiation
photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Materials Science(all)

Cite this

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abstract = "We report that treating indium tin oxide (ITO) source and drain electrodes with ozone or oxygen (O2) plasma enhances the hole injection from these electrodes to pentacene semiconductor, thereby improving the performance of pentacene thin-film transistors. Synchrotron radiation photoelectron spectroscopy results showed that the ozone and O2 plasma treatments of the electrodes increased their work functions by about 0.4 and 1.0 eV, respectively, compared to the as-deposited ITO electrode. These increases in work function were found to lower the hole injection barrier, producing remarkable increases in the field-effect mobility.",
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Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistors. / Lee, Hwa Sung; Cho, Jeong Ho; Kim, Woong Kwon; Lee, Jong Lam; Cho, Kilwon.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 8, 20.06.2007.

Research output: Contribution to journalArticle

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T1 - Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistors

AU - Lee, Hwa Sung

AU - Cho, Jeong Ho

AU - Kim, Woong Kwon

AU - Lee, Jong Lam

AU - Cho, Kilwon

PY - 2007/6/20

Y1 - 2007/6/20

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AB - We report that treating indium tin oxide (ITO) source and drain electrodes with ozone or oxygen (O2) plasma enhances the hole injection from these electrodes to pentacene semiconductor, thereby improving the performance of pentacene thin-film transistors. Synchrotron radiation photoelectron spectroscopy results showed that the ozone and O2 plasma treatments of the electrodes increased their work functions by about 0.4 and 1.0 eV, respectively, compared to the as-deposited ITO electrode. These increases in work function were found to lower the hole injection barrier, producing remarkable increases in the field-effect mobility.

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