Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application

Jin Hwa Heo, Dong Chan Kim, Bon Young Koo, Ji Hyun Kim, Chul Sung Kim, Young Jin Noh, Sung Kweon Baek, Yu Gyun Shin, U. In Chung, Joo Tae Moon, Mann Ho Cho, Kwun Bum Chung, Dae Won Moon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We reduced the gate tunnelling current by seven times and suppressed NBTI using plasma nitridation-induced re-oxidation (PIROX). In plasma nitrided gate oxynitride, the nitrogen concentration at the MOS interface is determined after plasma nitridation process, which affects the electrical and physical properties of gate oxynitride. To facilitate the control of nitrogen concentration at the MOS interface, an additional reoxidation process is needed, but decreasing the nitrogen concentration. In this paper, the plasma nitridation process is proposed that realizes simultaneously the nitridation and re-oxidation without an additional process and the decrease of nitrogen concentration. The control of nitrogen concentration and the amount of re-oxidation under high pressure process improves the gate tunnelling current, mobility, and NBTI.

Original languageEnglish
Title of host publicationProceedings of ESSDERC 2005
Subtitle of host publication35th European Solid-State Device Research Conference
Pages205-208
Number of pages4
DOIs
Publication statusPublished - 2005 Dec 1
EventESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France
Duration: 2005 Sep 122005 Sep 16

Publication series

NameProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume2005

Other

OtherESSDERC 2005: 35th European Solid-State Device Research Conference
CountryFrance
CityGrenoble
Period05/9/1205/9/16

Fingerprint

Nitridation
Dynamic random access storage
Gate dielectrics
Electric properties
Nitrogen
Plasmas
Oxides
Oxidation
Physical properties

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Heo, J. H., Kim, D. C., Koo, B. Y., Kim, J. H., Kim, C. S., Noh, Y. J., ... Moon, D. W. (2005). Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 205-208). [1546621] (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546621
Heo, Jin Hwa ; Kim, Dong Chan ; Koo, Bon Young ; Kim, Ji Hyun ; Kim, Chul Sung ; Noh, Young Jin ; Baek, Sung Kweon ; Shin, Yu Gyun ; Chung, U. In ; Moon, Joo Tae ; Cho, Mann Ho ; Chung, Kwun Bum ; Moon, Dae Won. / Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application. Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. pp. 205-208 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference).
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abstract = "We reduced the gate tunnelling current by seven times and suppressed NBTI using plasma nitridation-induced re-oxidation (PIROX). In plasma nitrided gate oxynitride, the nitrogen concentration at the MOS interface is determined after plasma nitridation process, which affects the electrical and physical properties of gate oxynitride. To facilitate the control of nitrogen concentration at the MOS interface, an additional reoxidation process is needed, but decreasing the nitrogen concentration. In this paper, the plasma nitridation process is proposed that realizes simultaneously the nitridation and re-oxidation without an additional process and the decrease of nitrogen concentration. The control of nitrogen concentration and the amount of re-oxidation under high pressure process improves the gate tunnelling current, mobility, and NBTI.",
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Heo, JH, Kim, DC, Koo, BY, Kim, JH, Kim, CS, Noh, YJ, Baek, SK, Shin, YG, Chung, UI, Moon, JT, Cho, MH, Chung, KB & Moon, DW 2005, Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application. in Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference., 1546621, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 205-208, ESSDERC 2005: 35th European Solid-State Device Research Conference, Grenoble, France, 05/9/12. https://doi.org/10.1109/ESSDER.2005.1546621

Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application. / Heo, Jin Hwa; Kim, Dong Chan; Koo, Bon Young; Kim, Ji Hyun; Kim, Chul Sung; Noh, Young Jin; Baek, Sung Kweon; Shin, Yu Gyun; Chung, U. In; Moon, Joo Tae; Cho, Mann Ho; Chung, Kwun Bum; Moon, Dae Won.

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 205-208 1546621 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Heo, Jin Hwa

AU - Kim, Dong Chan

AU - Koo, Bon Young

AU - Kim, Ji Hyun

AU - Kim, Chul Sung

AU - Noh, Young Jin

AU - Baek, Sung Kweon

AU - Shin, Yu Gyun

AU - Chung, U. In

AU - Moon, Joo Tae

AU - Cho, Mann Ho

AU - Chung, Kwun Bum

AU - Moon, Dae Won

PY - 2005/12/1

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N2 - We reduced the gate tunnelling current by seven times and suppressed NBTI using plasma nitridation-induced re-oxidation (PIROX). In plasma nitrided gate oxynitride, the nitrogen concentration at the MOS interface is determined after plasma nitridation process, which affects the electrical and physical properties of gate oxynitride. To facilitate the control of nitrogen concentration at the MOS interface, an additional reoxidation process is needed, but decreasing the nitrogen concentration. In this paper, the plasma nitridation process is proposed that realizes simultaneously the nitridation and re-oxidation without an additional process and the decrease of nitrogen concentration. The control of nitrogen concentration and the amount of re-oxidation under high pressure process improves the gate tunnelling current, mobility, and NBTI.

AB - We reduced the gate tunnelling current by seven times and suppressed NBTI using plasma nitridation-induced re-oxidation (PIROX). In plasma nitrided gate oxynitride, the nitrogen concentration at the MOS interface is determined after plasma nitridation process, which affects the electrical and physical properties of gate oxynitride. To facilitate the control of nitrogen concentration at the MOS interface, an additional reoxidation process is needed, but decreasing the nitrogen concentration. In this paper, the plasma nitridation process is proposed that realizes simultaneously the nitridation and re-oxidation without an additional process and the decrease of nitrogen concentration. The control of nitrogen concentration and the amount of re-oxidation under high pressure process improves the gate tunnelling current, mobility, and NBTI.

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T3 - Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

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Heo JH, Kim DC, Koo BY, Kim JH, Kim CS, Noh YJ et al. Effects of plasma nitridation on the electrical properties of nitrided oxide gate dielectric for DRAM application. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 205-208. 1546621. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDER.2005.1546621