The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO2 film remained to be amorphous, and the 600°C-annealed HfO2 film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.
All Science Journal Classification (ASJC) codes
- Materials Science(all)