Effects of post-annealing on properties of HfO2 films grown by ALD

J. W. Lee, M. H. Ham, W. J. Maeng, H. Kim, Jae Min Myoung

Research output: Contribution to journalArticle

Abstract

The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO2 film remained to be amorphous, and the 600°C-annealed HfO2 film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

Original languageEnglish
Pages (from-to)96-99
Number of pages4
JournalKorean Journal of Materials Research
Volume17
Issue number2
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

Annealing
Capacitance
MOS capacitors
Atomic layer deposition
Gate dielectrics
Current voltage characteristics
Leakage currents
X ray diffraction
Thin films
Defects
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Lee, J. W. ; Ham, M. H. ; Maeng, W. J. ; Kim, H. ; Myoung, Jae Min. / Effects of post-annealing on properties of HfO2 films grown by ALD. In: Korean Journal of Materials Research. 2007 ; Vol. 17, No. 2. pp. 96-99.
@article{00bbfce0d9d845ae9e341726638848d8,
title = "Effects of post-annealing on properties of HfO2 films grown by ALD",
abstract = "The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO2 film remained to be amorphous, and the 600°C-annealed HfO2 film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.",
author = "Lee, {J. W.} and Ham, {M. H.} and Maeng, {W. J.} and H. Kim and Myoung, {Jae Min}",
year = "2007",
month = "1",
day = "1",
doi = "10.3740/MRSK.2007.17.2.096",
language = "English",
volume = "17",
pages = "96--99",
journal = "Korean Journal of Materials Research",
issn = "1225-0562",
publisher = "The Korea Federation of Science and Technology",
number = "2",

}

Effects of post-annealing on properties of HfO2 films grown by ALD. / Lee, J. W.; Ham, M. H.; Maeng, W. J.; Kim, H.; Myoung, Jae Min.

In: Korean Journal of Materials Research, Vol. 17, No. 2, 01.01.2007, p. 96-99.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of post-annealing on properties of HfO2 films grown by ALD

AU - Lee, J. W.

AU - Ham, M. H.

AU - Maeng, W. J.

AU - Kim, H.

AU - Myoung, Jae Min

PY - 2007/1/1

Y1 - 2007/1/1

N2 - The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO2 film remained to be amorphous, and the 600°C-annealed HfO2 film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

AB - The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO2 film remained to be amorphous, and the 600°C-annealed HfO2 film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

UR - http://www.scopus.com/inward/record.url?scp=34547987022&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547987022&partnerID=8YFLogxK

U2 - 10.3740/MRSK.2007.17.2.096

DO - 10.3740/MRSK.2007.17.2.096

M3 - Article

VL - 17

SP - 96

EP - 99

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

SN - 1225-0562

IS - 2

ER -