Effects of post-annealing on properties of HfO2 films grown by ALD

J. W. Lee, M. H. Ham, W. J. Maeng, H. Kim, J. M. Myoung

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Abstract

The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO2 film remained to be amorphous, and the 600°C-annealed HfO2 film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

Original languageEnglish
Pages (from-to)96-99
Number of pages4
JournalKorean Journal of Materials Research
Volume17
Issue number2
DOIs
Publication statusPublished - 2007 Feb

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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