Effects of post-annealing on properties of HfO2 films grown by ALD

J. W. Lee; M. H. Ham; W. J. Maeng; H. Kim; J. M. Myoung

doi:10.3740/MRSK.2007.17.2.096

Effects of post-annealing on properties of HfO₂ films grown by ALD

J. W. Lee, M. H. Ham, W. J. Maeng, H. Kim, J. M. Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effects of post-annealing of high-k HfO₂ thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO₂/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO₂ film remained to be amorphous, and the 600°C-annealed HfO₂ film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO₂ films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

Original language	English
Pages (from-to)	96-99
Number of pages	4
Journal	Korean Journal of Materials Research
Volume	17
Issue number	2
DOIs	https://doi.org/10.3740/MRSK.2007.17.2.096
Publication status	Published - 2007 Feb

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.3740/MRSK.2007.17.2.096

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title = "Effects of post-annealing on properties of HfO2 films grown by ALD",

abstract = "The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO2 film remained to be amorphous, and the 600°C-annealed HfO2 film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.",

author = "Lee, {J. W.} and Ham, {M. H.} and Maeng, {W. J.} and H. Kim and Myoung, {J. M.}",

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publisher = "The Korea Federation of Science and Technology",

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T1 - Effects of post-annealing on properties of HfO2 films grown by ALD

AU - Lee, J. W.

AU - Ham, M. H.

AU - Maeng, W. J.

AU - Kim, H.

AU - Myoung, J. M.

PY - 2007/2

Y1 - 2007/2

N2 - The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO2 film remained to be amorphous, and the 600°C-annealed HfO2 film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

AB - The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600°C. Pt/HO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500°C-annealed HfO2 film remained to be amorphous, and the 600°C-annealed HfO2 film was crystallized. The annealing treatment at 500°C resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

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JO - Korean Journal of Materials Research

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Effects of post-annealing on properties of HfO₂ films grown by ALD

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