Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si

Sang Hyuck Bae, Sang Yeol Lee, Hyun Young Kim, Seongil Im

Research output: Contribution to journalConference article

57 Citations (Scopus)

Abstract

ZnO thin films on (1 0 0) p-type silicon substrates have been deposited by pulsed laser deposition technique. In order to investigate the effect of post-annealing treatment with oxygen on the optical property of ZnO thin films, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been observed to be improved which results in increasing ultra-violet (UV) emission intensity of photoluminescence (PL).

Original languageEnglish
Pages (from-to)327-330
Number of pages4
JournalOptical Materials
Volume17
Issue number1-2
DOIs
Publication statusPublished - 2001 Jun
EventOptoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France
Duration: 2000 May 302000 Jun 2

Fingerprint

Light emission
light emission
Annealing
Oxygen
Thin films
annealing
ultraviolet emission
oxygen
Silicon
Substrates
Pulsed laser deposition
thin films
Stoichiometry
pulsed laser deposition
stoichiometry
Photoluminescence
Optical properties
photoluminescence
optical properties
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

Cite this

Bae, Sang Hyuck ; Lee, Sang Yeol ; Kim, Hyun Young ; Im, Seongil. / Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si. In: Optical Materials. 2001 ; Vol. 17, No. 1-2. pp. 327-330.
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Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si. / Bae, Sang Hyuck; Lee, Sang Yeol; Kim, Hyun Young; Im, Seongil.

In: Optical Materials, Vol. 17, No. 1-2, 06.2001, p. 327-330.

Research output: Contribution to journalConference article

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AU - Im, Seongil

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AB - ZnO thin films on (1 0 0) p-type silicon substrates have been deposited by pulsed laser deposition technique. In order to investigate the effect of post-annealing treatment with oxygen on the optical property of ZnO thin films, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been observed to be improved which results in increasing ultra-violet (UV) emission intensity of photoluminescence (PL).

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