ZnO thin films on (1 0 0) p-type silicon substrates have been deposited by pulsed laser deposition technique. In order to investigate the effect of post-annealing treatment with oxygen on the optical property of ZnO thin films, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been observed to be improved which results in increasing ultra-violet (UV) emission intensity of photoluminescence (PL).
|Number of pages||4|
|Publication status||Published - 2001 Jun|
|Event||Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France|
Duration: 2000 May 30 → 2000 Jun 2
Bibliographical noteFunding Information:
This work was supported by the development program for the exemplary schools in information and communications from the Ministry of Information and Communication (MIC).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering