Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching

H. H. Park, K. H. Kwon, S. H. Lee, S. Nahm, J. W. Lee, B. H. Koak, K. S. Suh, O. J. Kwon, J. L. Lee, G. Y. Yeom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.

Original languageEnglish
Title of host publicationSurface Chemical Cleaning and Passivation for Semiconductor Processing
EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
PublisherPubl by Materials Research Society
Pages243-248
Number of pages6
ISBN (Print)1558992138
Publication statusPublished - 1993 Dec 1
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 1993 Apr 131993 Apr 15

Publication series

NameMaterials Research Society Symposium Proceedings
Volume315
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period93/4/1393/4/15

Fingerprint

Reactive ion etching
Silicon
etching
Fluorine
Rutherford backscattering spectroscopy
silicon
High resolution transmission electron microscopy
Plasmas
fluorine
backscattering
ions
Ions
Fluorocarbons
transmission electron microscopy
high resolution
fluorocarbons
Point defects
point defects
cleaning
spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, H. H., Kwon, K. H., Lee, S. H., Nahm, S., Lee, J. W., Koak, B. H., ... Yeom, G. Y. (1993). Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 243-248). (Materials Research Society Symposium Proceedings; Vol. 315). Publ by Materials Research Society.
Park, H. H. ; Kwon, K. H. ; Lee, S. H. ; Nahm, S. ; Lee, J. W. ; Koak, B. H. ; Suh, K. S. ; Kwon, O. J. ; Lee, J. L. ; Yeom, G. Y. / Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. Surface Chemical Cleaning and Passivation for Semiconductor Processing. editor / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. Publ by Materials Research Society, 1993. pp. 243-248 (Materials Research Society Symposium Proceedings).
@inproceedings{3b1498cad3e6414a8c7a46e7f0605c6b,
title = "Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching",
abstract = "The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.",
author = "Park, {H. H.} and Kwon, {K. H.} and Lee, {S. H.} and S. Nahm and Lee, {J. W.} and Koak, {B. H.} and Suh, {K. S.} and Kwon, {O. J.} and Lee, {J. L.} and Yeom, {G. Y.}",
year = "1993",
month = "12",
day = "1",
language = "English",
isbn = "1558992138",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "243--248",
editor = "Higashi, {Gregg S.} and Irene, {Eugene A.} and Tadahiro Ohmi",
booktitle = "Surface Chemical Cleaning and Passivation for Semiconductor Processing",

}

Park, HH, Kwon, KH, Lee, SH, Nahm, S, Lee, JW, Koak, BH, Suh, KS, Kwon, OJ, Lee, JL & Yeom, GY 1993, Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. in GS Higashi, EA Irene & T Ohmi (eds), Surface Chemical Cleaning and Passivation for Semiconductor Processing. Materials Research Society Symposium Proceedings, vol. 315, Publ by Materials Research Society, pp. 243-248, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 93/4/13.

Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. / Park, H. H.; Kwon, K. H.; Lee, S. H.; Nahm, S.; Lee, J. W.; Koak, B. H.; Suh, K. S.; Kwon, O. J.; Lee, J. L.; Yeom, G. Y.

Surface Chemical Cleaning and Passivation for Semiconductor Processing. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. Publ by Materials Research Society, 1993. p. 243-248 (Materials Research Society Symposium Proceedings; Vol. 315).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching

AU - Park, H. H.

AU - Kwon, K. H.

AU - Lee, S. H.

AU - Nahm, S.

AU - Lee, J. W.

AU - Koak, B. H.

AU - Suh, K. S.

AU - Kwon, O. J.

AU - Lee, J. L.

AU - Yeom, G. Y.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.

AB - The modification of silicon surface due to reactive ion etching (RIE) using a CHF3/C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and high resolution transmission electron microscopy (HRTEM). A flat and uniform residue layer of about 40 angstrom in thickness has been observed in cross-sectional HRTEM work. The interface is sharply defined and smooth. Neither point defect cluster nor distinct planar defect has been found in substrate silicon lattice image. This is also confirmed by comparison scaled and energy shifted silicon surface peak of a control sample with the reactive ion etched sample using ion channeling RBS. NF3, Cl2, and SF6 plasma treatments have been carried out to remove the residue layer. Among them, NF3 treatment has been revealed to be the most effective. With 10 seconds exposure to NF3 plasma, fluorocarbon residue film decomposes, and the remaining fluorine mostly binds to silicon; the fluorine completely disappears after the subsequent wet cleaning.

UR - http://www.scopus.com/inward/record.url?scp=0027873282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027873282&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027873282

SN - 1558992138

T3 - Materials Research Society Symposium Proceedings

SP - 243

EP - 248

BT - Surface Chemical Cleaning and Passivation for Semiconductor Processing

A2 - Higashi, Gregg S.

A2 - Irene, Eugene A.

A2 - Ohmi, Tadahiro

PB - Publ by Materials Research Society

ER -

Park HH, Kwon KH, Lee SH, Nahm S, Lee JW, Koak BH et al. Effects of post etch treatments on contaminated silicon surface due to CHF3/C2F6 reactive ion etching. In Higashi GS, Irene EA, Ohmi T, editors, Surface Chemical Cleaning and Passivation for Semiconductor Processing. Publ by Materials Research Society. 1993. p. 243-248. (Materials Research Society Symposium Proceedings).