Effects of post-metallization annealing of high-K dielectric thin films grown by MOMBE

Minseong Yun; Myoung Seok Kim; Young Don Ko; Tae Hyoung Moon; Jang Hyuk Hong; Jae Min Myoung; Ilgu Yun

doi:10.1016/j.mee.2004.08.009

Effects of post-metallization annealing of high-K dielectric thin films grown by MOMBE

Minseong Yun, Myoung Seok Kim, Young Don Ko, Tae Hyoung Moon, Jang Hyuk Hong, Jae Min Myoung, Ilgu Yun

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this paper, the effect of post-metallization annealing (PMA) of high-K (HfO₂ thin films grown by MOMBE method was investigated. Au/HfO ₂/p-Si MOS capacitor structures were fabricated. In turn, the current-voltage (I-V) and high frequency (HF) capacitance-voltage (C-V) characteristics were measured to analyze the electrical characteristics of dielectric layers. As the result of PMA at 250°C, it was found that the interface state density decreased after PMA. It was also observed that as the annealing time increased, the leakage current at operating voltage increased while the breakdown field was reduced. Through the experiments, it is found that PMA is a critical factor in determining the quality of gate dielectric layer.

Original language	English
Pages (from-to)	48-54
Number of pages	7
Journal	Microelectronic Engineering
Volume	77
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2004.08.009
Publication status	Published - 2005 Jan

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2004.08.009

Cite this

@article{767ef2a36242476c84f13add9c6a2b67,

title = "Effects of post-metallization annealing of high-K dielectric thin films grown by MOMBE",

abstract = "In this paper, the effect of post-metallization annealing (PMA) of high-K (HfO2 thin films grown by MOMBE method was investigated. Au/HfO 2/p-Si MOS capacitor structures were fabricated. In turn, the current-voltage (I-V) and high frequency (HF) capacitance-voltage (C-V) characteristics were measured to analyze the electrical characteristics of dielectric layers. As the result of PMA at 250°C, it was found that the interface state density decreased after PMA. It was also observed that as the annealing time increased, the leakage current at operating voltage increased while the breakdown field was reduced. Through the experiments, it is found that PMA is a critical factor in determining the quality of gate dielectric layer.",

author = "Minseong Yun and Kim, {Myoung Seok} and Ko, {Young Don} and Moon, {Tae Hyoung} and Hong, {Jang Hyuk} and Myoung, {Jae Min} and Ilgu Yun",

year = "2005",

month = jan,

doi = "10.1016/j.mee.2004.08.009",

language = "English",

volume = "77",

pages = "48--54",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Effects of post-metallization annealing of high-K dielectric thin films grown by MOMBE

AU - Yun, Minseong

AU - Kim, Myoung Seok

AU - Ko, Young Don

AU - Moon, Tae Hyoung

AU - Hong, Jang Hyuk

AU - Myoung, Jae Min

AU - Yun, Ilgu

PY - 2005/1

Y1 - 2005/1

N2 - In this paper, the effect of post-metallization annealing (PMA) of high-K (HfO2 thin films grown by MOMBE method was investigated. Au/HfO 2/p-Si MOS capacitor structures were fabricated. In turn, the current-voltage (I-V) and high frequency (HF) capacitance-voltage (C-V) characteristics were measured to analyze the electrical characteristics of dielectric layers. As the result of PMA at 250°C, it was found that the interface state density decreased after PMA. It was also observed that as the annealing time increased, the leakage current at operating voltage increased while the breakdown field was reduced. Through the experiments, it is found that PMA is a critical factor in determining the quality of gate dielectric layer.

AB - In this paper, the effect of post-metallization annealing (PMA) of high-K (HfO2 thin films grown by MOMBE method was investigated. Au/HfO 2/p-Si MOS capacitor structures were fabricated. In turn, the current-voltage (I-V) and high frequency (HF) capacitance-voltage (C-V) characteristics were measured to analyze the electrical characteristics of dielectric layers. As the result of PMA at 250°C, it was found that the interface state density decreased after PMA. It was also observed that as the annealing time increased, the leakage current at operating voltage increased while the breakdown field was reduced. Through the experiments, it is found that PMA is a critical factor in determining the quality of gate dielectric layer.

UR - http://www.scopus.com/inward/record.url?scp=9644259241&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9644259241&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2004.08.009

DO - 10.1016/j.mee.2004.08.009

M3 - Article

AN - SCOPUS:9644259241

SN - 0167-9317

VL - 77

SP - 48

EP - 54

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

ER -

Effects of post-metallization annealing of high-K dielectric thin films grown by MOMBE

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this