Effects of post-metallization annealing of high-K dielectric thin films grown by MOMBE

Minseong Yun, Myoung Seok Kim, Young Don Ko, Tae Hyoung Moon, Jang Hyuk Hong, Jae Min Myoung, Ilgu Yun

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this paper, the effect of post-metallization annealing (PMA) of high-K (HfO2 thin films grown by MOMBE method was investigated. Au/HfO 2/p-Si MOS capacitor structures were fabricated. In turn, the current-voltage (I-V) and high frequency (HF) capacitance-voltage (C-V) characteristics were measured to analyze the electrical characteristics of dielectric layers. As the result of PMA at 250°C, it was found that the interface state density decreased after PMA. It was also observed that as the annealing time increased, the leakage current at operating voltage increased while the breakdown field was reduced. Through the experiments, it is found that PMA is a critical factor in determining the quality of gate dielectric layer.

Original languageEnglish
Pages (from-to)48-54
Number of pages7
JournalMicroelectronic Engineering
Volume77
Issue number1
DOIs
Publication statusPublished - 2005 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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