Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

K. B. Chung, M. H. Cho, U. Hwang, H. J. Kang, D. C. Suh, H. C. Sohn, D. H. Ko, S. H. Kim, H. T. Jeon

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9 Citations (Scopus)

Abstract

The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.

Original languageEnglish
Article number022907
JournalApplied Physics Letters
Volume92
Issue number2
DOIs
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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