Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

K. B. Chung, M. H. Cho, U. Hwang, H. J. Kang, D. C. Suh, H. C. Sohn, D. H. Ko, S. H. Kim, H. T. Jeon

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9 Citations (Scopus)

Abstract

The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.

Original languageEnglish
Article number022907
JournalApplied Physics Letters
Volume92
Issue number2
DOIs
Publication statusPublished - 2008 Jan 28

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silicates
annealing
valence
recovery
dissociation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chung, K. B. ; Cho, M. H. ; Hwang, U. ; Kang, H. J. ; Suh, D. C. ; Sohn, H. C. ; Ko, D. H. ; Kim, S. H. ; Jeon, H. T. / Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films. In: Applied Physics Letters. 2008 ; Vol. 92, No. 2.
@article{5d103c7efef847b2afb5bee643e97be0,
title = "Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films",
abstract = "The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.",
author = "Chung, {K. B.} and Cho, {M. H.} and U. Hwang and Kang, {H. J.} and Suh, {D. C.} and Sohn, {H. C.} and Ko, {D. H.} and Kim, {S. H.} and Jeon, {H. T.}",
year = "2008",
month = "1",
day = "28",
doi = "10.1063/1.2826271",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films. / Chung, K. B.; Cho, M. H.; Hwang, U.; Kang, H. J.; Suh, D. C.; Sohn, H. C.; Ko, D. H.; Kim, S. H.; Jeon, H. T.

In: Applied Physics Letters, Vol. 92, No. 2, 022907, 28.01.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

AU - Chung, K. B.

AU - Cho, M. H.

AU - Hwang, U.

AU - Kang, H. J.

AU - Suh, D. C.

AU - Sohn, H. C.

AU - Ko, D. H.

AU - Kim, S. H.

AU - Jeon, H. T.

PY - 2008/1/28

Y1 - 2008/1/28

N2 - The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.

AB - The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5±0.1 eV) and postnitridation annealing (5.6±0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.

UR - http://www.scopus.com/inward/record.url?scp=38349138529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38349138529&partnerID=8YFLogxK

U2 - 10.1063/1.2826271

DO - 10.1063/1.2826271

M3 - Article

AN - SCOPUS:38349138529

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 022907

ER -