The main factors influencing the different solubility limits of Al- and Ga-doped ZnO systems are studied. The different thermoelectric properties of Al- and Ga-doped ZnO systems were attributed in prior studies to the different solubility limits and secondary phases of these systems. In this study, the origin of these differences, i.e., the Ga2O3(ZnO) 9 secondary phase, was suppressed by a low-temperature synthesis process for the Zn0.98Ga0.02O solid solution. As a result, a novel synthesis process for Zn0.98Ga0.02O solid solution without the Ga2O3(ZnO)9 phase was established and the thermoelectric properties with and without the Ga 2O3(ZnO)9 secondary phase were compared. The thermoelectric properties of Zn0.98Al0.02O and Zn 0.98Ga0.02O specimens without Al2O 3(ZnO)9/Ga2O3(ZnO)9 phases were also compared.
Bibliographical noteFunding Information:
This work was supported by a Fundamental R&D Program for Core Technology of Materials (K0006007) Grant funded by the Ministry of Knowledge Economy, South Korea.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry