Abstract
We are reporting the effects of processing conditions on the evolution of various sizes and shapes in the wide bandgap oxide semicondoctors. We synthesized various nanostructures of ZnO and SnO2, the typical wide bandgap semiconductors for electronics and optoelectronics, based on a simple carbothermal reduction process on an Au-coated silicon substrate. By controlling the processing temperature and the atmosphere systematically, we could obtain various nanostructures such as combs, rods, rod arrays, and sheets in addition to the typical nanowires in ZnO. We also observed that the processing conditions are crucial parameters determining the density and diameter of the nanowires in ZnO and SnO2.
| Original language | English |
|---|---|
| Pages (from-to) | 729-732 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 45 |
| Issue number | 3 |
| Publication status | Published - 2004 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Effects of processing conditions on the evolution of nanostructures in oxide semiconductors. / Park, Jae Hwan; Choi, Heon Jin; Park, Jae Gwan.
In: Journal of the Korean Physical Society, Vol. 45, No. 3, 01.09.2004, p. 729-732.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of processing conditions on the evolution of nanostructures in oxide semiconductors
AU - Park, Jae Hwan
AU - Choi, Heon Jin
AU - Park, Jae Gwan
PY - 2004/9/1
Y1 - 2004/9/1
N2 - We are reporting the effects of processing conditions on the evolution of various sizes and shapes in the wide bandgap oxide semicondoctors. We synthesized various nanostructures of ZnO and SnO2, the typical wide bandgap semiconductors for electronics and optoelectronics, based on a simple carbothermal reduction process on an Au-coated silicon substrate. By controlling the processing temperature and the atmosphere systematically, we could obtain various nanostructures such as combs, rods, rod arrays, and sheets in addition to the typical nanowires in ZnO. We also observed that the processing conditions are crucial parameters determining the density and diameter of the nanowires in ZnO and SnO2.
AB - We are reporting the effects of processing conditions on the evolution of various sizes and shapes in the wide bandgap oxide semicondoctors. We synthesized various nanostructures of ZnO and SnO2, the typical wide bandgap semiconductors for electronics and optoelectronics, based on a simple carbothermal reduction process on an Au-coated silicon substrate. By controlling the processing temperature and the atmosphere systematically, we could obtain various nanostructures such as combs, rods, rod arrays, and sheets in addition to the typical nanowires in ZnO. We also observed that the processing conditions are crucial parameters determining the density and diameter of the nanowires in ZnO and SnO2.
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M3 - Article
AN - SCOPUS:6344284802
VL - 45
SP - 729
EP - 732
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 3
ER -