Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3

W. J. Lee, M. H. Cho, K. B. Chung, Y. S. Lee, D. C. Kim, S. Y. Choi, U. I. Chung, J. T. Moon

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The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and N H3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and N H3 were less than those observed for the nitrided film prepared by thermal annealing in only N H3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.

Original languageEnglish
Article number012901
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2008 Jul 21


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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