Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3

W. J. Lee, Mann-Ho Cho, K. B. Chung, Y. S. Lee, D. C. Kim, S. Y. Choi, U. I. Chung, J. T. Moon

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and N H3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and N H3 were less than those observed for the nitrided film prepared by thermal annealing in only N H3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.

Original languageEnglish
Article number012901
JournalApplied Physics Letters
Volume93
Issue number1
DOIs
Publication statusPublished - 2008 Jul 21

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alignment
annealing
valence

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, W. J. ; Cho, Mann-Ho ; Chung, K. B. ; Lee, Y. S. ; Kim, D. C. ; Choi, S. Y. ; Chung, U. I. ; Moon, J. T. / Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3. In: Applied Physics Letters. 2008 ; Vol. 93, No. 1.
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abstract = "The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and N H3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and N H3 were less than those observed for the nitrided film prepared by thermal annealing in only N H3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.",
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Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3. / Lee, W. J.; Cho, Mann-Ho; Chung, K. B.; Lee, Y. S.; Kim, D. C.; Choi, S. Y.; Chung, U. I.; Moon, J. T.

In: Applied Physics Letters, Vol. 93, No. 1, 012901, 21.07.2008.

Research output: Contribution to journalArticle

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AU - Lee, W. J.

AU - Cho, Mann-Ho

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AU - Chung, U. I.

AU - Moon, J. T.

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AB - The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and N H3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and N H3 were less than those observed for the nitrided film prepared by thermal annealing in only N H3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.

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