The effects of reoxidation on the band structure of N-incorporated SiON films were investigated as a function of thermal treatment in NO and N H3. Reoxidation-associated changes in band gap and valence band offset of the N-incorporated SiON films prepared by sequential thermal annealing in both NO and N H3 were less than those observed for the nitrided film prepared by thermal annealing in only N H3. The differences in band-alignment characteristics of the nitrided films that resulted from use of different nitridation methods were strongly related to the depth distribution of N and the chemical states of N bonded to Si.
Bibliographical noteFunding Information:
This work was partially supported by the Joint Program for Industry-Institute of Samsung Electronics, the IT R&D program of MKE/IITA (2008-F-023-01, next generation future device fabricated by using nanojunction), and the Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-357-C00020).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)