Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers

H. B. Kim, T. G. Kim, J. H. Son, C. N. Whang, K. H. Chae, W. S. Lee, S. Im, J. H. Song

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Abstract

Si ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1 × 1014 to 1 × 1017 Si/cm2 at room temperature. Si ions go through the interface between SiO2 layer and Si substrate generating defects in SiO2 layer and Si substrate as well. Defect-related phenomena were characterized by photoluminescence (PL) and electron spin resonance (ESR) measurements. The PL experiment shows that there exists a dose window for a maximum intensity of luminescence related to radiative defects, while the ESR exhibits that nonradiative defects change from E′ centers to Pb centers as the dose increases. It is considered that the intensity is controlled by the density ratio of radiative to nonradiative defects induced by ion implantation.

Original languageEnglish
Pages (from-to)1851-1854
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number4
DOIs
Publication statusPublished - 2000 Aug 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Kim, H. B., Kim, T. G., Son, J. H., Whang, C. N., Chae, K. H., Lee, W. S., Im, S., & Song, J. H. (2000). Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers. Journal of Applied Physics, 88(4), 1851-1854. https://doi.org/10.1063/1.1305909