We report the effects of an SiO 2 interlayer on the structural and electrical properties of Al-doped ZnO (AZO) films grown on polyimide (PI) substrate. By inserting a SiO 2 interlayer between the AZO film and the PI substrate, we could control the microstructure of the AZO films. The granule size of the SiO 2 interlayer was determined strate temperature, and the column width in the AZO film was strongly affected by the initial granule size in the interlayer. In-situ Hall measurement of the AZO films under bending stress was performed for the first time, and flexibility-related electrical properties of the AZO films were discussed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials