Effects of SiO 2 interlayer on electrical properties of Al-doped ZnO films under bending stress

Young Soo Lim, Seul Gi Seo, Bo Bae Kim, Hyoung Seuk Choi, Won Seon Seo, Yong Soo Cho, Hyung-Ho Park

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report the effects of an SiO 2 interlayer on the structural and electrical properties of Al-doped ZnO (AZO) films grown on polyimide (PI) substrate. By inserting a SiO 2 interlayer between the AZO film and the PI substrate, we could control the microstructure of the AZO films. The granule size of the SiO 2 interlayer was determined strate temperature, and the column width in the AZO film was strongly affected by the initial granule size in the interlayer. In-situ Hall measurement of the AZO films under bending stress was performed for the first time, and flexibility-related electrical properties of the AZO films were discussed.

Original languageEnglish
Pages (from-to)375-379
Number of pages5
JournalElectronic Materials Letters
Volume8
Issue number4
DOIs
Publication statusPublished - 2012 Aug 1

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Electric properties
Polyimides
Substrates
Structural properties
Microstructure
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Lim, Young Soo ; Seo, Seul Gi ; Kim, Bo Bae ; Choi, Hyoung Seuk ; Seo, Won Seon ; Cho, Yong Soo ; Park, Hyung-Ho. / Effects of SiO 2 interlayer on electrical properties of Al-doped ZnO films under bending stress. In: Electronic Materials Letters. 2012 ; Vol. 8, No. 4. pp. 375-379.
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Effects of SiO 2 interlayer on electrical properties of Al-doped ZnO films under bending stress. / Lim, Young Soo; Seo, Seul Gi; Kim, Bo Bae; Choi, Hyoung Seuk; Seo, Won Seon; Cho, Yong Soo; Park, Hyung-Ho.

In: Electronic Materials Letters, Vol. 8, No. 4, 01.08.2012, p. 375-379.

Research output: Contribution to journalArticle

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