Effects of SiO 2 interlayer on electrical properties of Al-doped ZnO films under bending stress

Young Soo Lim, Seul Gi Seo, Bo Bae Kim, Hyoung Seuk Choi, Won Seon Seo, Yong Soo Cho, Hyung-Ho Park

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12 Citations (Scopus)


We report the effects of an SiO 2 interlayer on the structural and electrical properties of Al-doped ZnO (AZO) films grown on polyimide (PI) substrate. By inserting a SiO 2 interlayer between the AZO film and the PI substrate, we could control the microstructure of the AZO films. The granule size of the SiO 2 interlayer was determined strate temperature, and the column width in the AZO film was strongly affected by the initial granule size in the interlayer. In-situ Hall measurement of the AZO films under bending stress was performed for the first time, and flexibility-related electrical properties of the AZO films were discussed.

Original languageEnglish
Pages (from-to)375-379
Number of pages5
JournalElectronic Materials Letters
Issue number4
Publication statusPublished - 2012 Aug 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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