Effects of solution-processed Al2O3 gate insulator thickness on IGZO TFTs

Seung Min Song, Jeong Soo Lee, Dong Won Kang, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated In-Ga-Zn-O (IGZO) thin film transistors (TFTs) employing solution-processed aluminum oxide (Al2O3) gate insulators with various thicknesses from 100 nm to 370 nm. Leakage current density of Al2O3 gate insulators decreased exponentially and dielectric constant decreased with increasing insulator thickness. When the thickness of gate insulator was 230 nm, the sputtered IGZO TFT showed 9.00 cm2/Vs of the saturation mobility and 3.4 V of the threshold voltage.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages297-300
Number of pages4
Publication statusPublished - 2012 Dec 1
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 2012 Dec 42012 Dec 7

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
CountryJapan
CityKyoto
Period12/12/412/12/7

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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  • Cite this

    Song, S. M., Lee, J. S., Kang, D. W., Kwon, J. Y., & Han, M. K. (2012). Effects of solution-processed Al2O3 gate insulator thickness on IGZO TFTs. In Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 (pp. 297-300). (Proceedings of the International Display Workshops; Vol. 1).