Effects of solution-processed Al2O3 gate insulator thickness on IGZO TFTs

Seung Min Song, Jeong Soo Lee, Dong Won Kang, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We fabricated In-Ga-Zn-O (IGZO) thin film transistors (TFTs) employing solution-processed aluminum oxide (Al2O3) gate insulators with various thicknesses from 100 nm to 370 nm. Leakage current density of Al2O3 gate insulators decreased exponentially and dielectric constant decreased with increasing insulator thickness. When the thickness of gate insulator was 230 nm, the sputtered IGZO TFT showed 9.00 cm2/Vs of the saturation mobility and 3.4 V of the threshold voltage.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Number of pages4
Publication statusPublished - 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 2012 Dec 42012 Dec 7

Publication series

NameProceedings of the International Display Workshops
ISSN (Print)1883-2490


Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging


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