Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors

Keun Ho Lee, Jee Ho Park, Young Bum Yoo, Woo Soon Jang, Jin Young Oh, Soo Sang Chae, Kyeong Ju Moon, Jae Min Myoung, Hong Koo Baik

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Herein, we report a novel and easy strategy for fabricating solution-processed metal oxide thin-film transistors by controlling the dielectric constant of H2O through manipulation of the metal precursor solution temperature. As a result, indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated from IZO solution at 4 C can be operated after annealing at low temperatures (∼250 C). In contrast, IZO TFTs fabricated from IZO solutions at 25 and 60 C must be annealed at 275 and 300 C, respectively. We also found that IZO TFTs fabricated from the IZO precursor solution at 4 C had the highest mobility of 12.65 cm2/(V s), whereas the IZO TFTs fabricated from IZO precursor solutions at 25 and 60 C had field-effect mobility of 5.39 and 4.51 cm2/(V s), respectively, after annealing at 350 C. When the IZO precursor solution is at 4 C, metal cations such as indium (In3+) and zinc ions (Zn2+) can be fully surrounded by H2O molecules, because of the higher dielectric constant of H2O at lower temperatures. These chemical complexes in the IZO precursor solution at 4 C are advantageous for thermal hydrolysis and condensation reactions yielding a metal oxide lattice, because of their high potential energies. The IZO TFTs fabricated from the IZO precursor solution at 4 C had the highest mobility because of the formation of many metal-oxygen-metal (M-O-M) bonds under these conditions. In these bonds, the ns-orbitals of the metal cations overlap each other and form electron conduction pathways. Thus, the formation of a high proportion of M-O-M bonds in the IZO thin films is advantageous for electron conduction, because oxide lattices allow electrons to travel easily through the IZO.

Original languageEnglish
Pages (from-to)2585-2592
Number of pages8
JournalACS Applied Materials and Interfaces
Volume5
Issue number7
DOIs
Publication statusPublished - 2013 Apr 10

Fingerprint

Zinc Oxide
Indium
Thin film transistors
Zinc oxide
Oxide films
Metals
Temperature
Oxides
Cations
Electrons
Permittivity
Positive ions
Annealing
Oxygen
Condensation reactions
Potential energy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Lee, Keun Ho ; Park, Jee Ho ; Yoo, Young Bum ; Jang, Woo Soon ; Oh, Jin Young ; Chae, Soo Sang ; Moon, Kyeong Ju ; Myoung, Jae Min ; Baik, Hong Koo. / Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors. In: ACS Applied Materials and Interfaces. 2013 ; Vol. 5, No. 7. pp. 2585-2592.
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Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors. / Lee, Keun Ho; Park, Jee Ho; Yoo, Young Bum; Jang, Woo Soon; Oh, Jin Young; Chae, Soo Sang; Moon, Kyeong Ju; Myoung, Jae Min; Baik, Hong Koo.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 7, 10.04.2013, p. 2585-2592.

Research output: Contribution to journalArticle

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