Effects of structural modification via high-pressure annealing on solution-processed InGaO films and thin-film transistors

You Seung Rim, Hyung Wook Choi, Kyung Hwan Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated the structural modification of solution-processed nanocrystalline InGaO films via high-pressure annealing and fabricated thin-film transistors. The grain size of InGaO films annealed in the presence of oxygen under high pressure was significantly changed compared the films annealed without high pressure ambient. The O1s XPS peak distribution of InGaO films annealed under high pressure at 350 °C showed a peak similar to that of the non-pressure annealed film at 500 °C. The high-pressure annealing process promoted the elimination of organic residues and dehydroxylation of the metal hydroxide (M-OH) complex. We confirmed the improved device performance of high-pressure annealed InGaO-based thin-film transistors owing to the reduction in charge-trap density.

Original languageEnglish
Article number075112
JournalJournal of Physics D: Applied Physics
Volume49
Issue number7
DOIs
Publication statusPublished - 2016 Jan 29

Fingerprint

Thin film transistors
transistors
Annealing
annealing
thin films
hydroxides
elimination
X ray photoelectron spectroscopy
grain size
Metals
traps
Oxygen
oxygen
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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abstract = "We investigated the structural modification of solution-processed nanocrystalline InGaO films via high-pressure annealing and fabricated thin-film transistors. The grain size of InGaO films annealed in the presence of oxygen under high pressure was significantly changed compared the films annealed without high pressure ambient. The O1s XPS peak distribution of InGaO films annealed under high pressure at 350 °C showed a peak similar to that of the non-pressure annealed film at 500 °C. The high-pressure annealing process promoted the elimination of organic residues and dehydroxylation of the metal hydroxide (M-OH) complex. We confirmed the improved device performance of high-pressure annealed InGaO-based thin-film transistors owing to the reduction in charge-trap density.",
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Effects of structural modification via high-pressure annealing on solution-processed InGaO films and thin-film transistors. / Rim, You Seung; Choi, Hyung Wook; Kim, Kyung Hwan; Kim, Hyun Jae.

In: Journal of Physics D: Applied Physics, Vol. 49, No. 7, 075112, 29.01.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of structural modification via high-pressure annealing on solution-processed InGaO films and thin-film transistors

AU - Rim, You Seung

AU - Choi, Hyung Wook

AU - Kim, Kyung Hwan

AU - Kim, Hyun Jae

PY - 2016/1/29

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AB - We investigated the structural modification of solution-processed nanocrystalline InGaO films via high-pressure annealing and fabricated thin-film transistors. The grain size of InGaO films annealed in the presence of oxygen under high pressure was significantly changed compared the films annealed without high pressure ambient. The O1s XPS peak distribution of InGaO films annealed under high pressure at 350 °C showed a peak similar to that of the non-pressure annealed film at 500 °C. The high-pressure annealing process promoted the elimination of organic residues and dehydroxylation of the metal hydroxide (M-OH) complex. We confirmed the improved device performance of high-pressure annealed InGaO-based thin-film transistors owing to the reduction in charge-trap density.

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