Effects of substrate temperature on the device properties of pentacene-based thin film transistors using Al2O3+x gate dielectric

Jiyoul Lee, J. H. Kim, Seongil Im

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

The effects of substrate temperature on the pentacene-based organic thin film transistor (OTFT) device properties were studied. The aluminum oxide gate dielectric films were deposited by magnetron sputtering at fixed deposition rate for various substrate temperature. The x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroellipsometry (SE) techniques were used in the study. It was observed that the grain size of the pentacene layer increased with temperature and a phase transition occurred. No significant improvement of field-effect hole mobility was observed for varying temperature.

Original languageEnglish
Pages (from-to)3733-3736
Number of pages4
JournalJournal of Applied Physics
Volume95
Issue number7
DOIs
Publication statusPublished - 2004 Apr 1

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transistors
thin films
temperature
hole mobility
magnetron sputtering
x ray diffraction
aluminum oxides
grain size
atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "The effects of substrate temperature on the pentacene-based organic thin film transistor (OTFT) device properties were studied. The aluminum oxide gate dielectric films were deposited by magnetron sputtering at fixed deposition rate for various substrate temperature. The x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroellipsometry (SE) techniques were used in the study. It was observed that the grain size of the pentacene layer increased with temperature and a phase transition occurred. No significant improvement of field-effect hole mobility was observed for varying temperature.",
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N2 - The effects of substrate temperature on the pentacene-based organic thin film transistor (OTFT) device properties were studied. The aluminum oxide gate dielectric films were deposited by magnetron sputtering at fixed deposition rate for various substrate temperature. The x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroellipsometry (SE) techniques were used in the study. It was observed that the grain size of the pentacene layer increased with temperature and a phase transition occurred. No significant improvement of field-effect hole mobility was observed for varying temperature.

AB - The effects of substrate temperature on the pentacene-based organic thin film transistor (OTFT) device properties were studied. The aluminum oxide gate dielectric films were deposited by magnetron sputtering at fixed deposition rate for various substrate temperature. The x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroellipsometry (SE) techniques were used in the study. It was observed that the grain size of the pentacene layer increased with temperature and a phase transition occurred. No significant improvement of field-effect hole mobility was observed for varying temperature.

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