Effects of substrates on carbon nitride thin films prepared by direct dual ion beam deposition

Deuk Yeon Lee, Yong Hwan Kim, In Kyo Kim, Hong Koo Baik

Research output: Contribution to journalConference article

24 Citations (Scopus)

Abstract

In order to investigate the effects of substrates, amorphous carbon nitride thin films were deposited onto crystalline silicon and amorphous silicon nitride (a-SiNx) substrates using negative-carbon-ion beam and positive-nitrogen-ion beam. The resulting films were characterized using AES, XPS, Raman, and HRTEM. AES C KLL, Si LVV spectra and the result of cross-sectional HRTEM show that SiC was formed only on Si substrate as an intermediate phase, whereas carbon nitride films were formed directly on a-SiNx substrate without SiC intermediate phase. The deconvoluted results of XPS and Raman spectra show that the sp3/sp2 ratio and the atomic density of carbon nitride thin films increase with the deposition thickness except for the buffer layer corresponding to about 500 angstroms thickness. The characteristics of growing process of carbon nitride films on a-SiNx are similar to those of carbon nitride films on silicon. But the absolute values of the former properties, such as sp3/sp2 ratio and ID/IG ratio, are higher than those of the latter properties are. From these results, the different growth behavior of carbon nitride films on theses two substrates can be explained using the binding energy of each element.

Original languageEnglish
Pages (from-to)239-245
Number of pages7
JournalThin Solid Films
Volume355
DOIs
Publication statusPublished - 1999 Nov 1
EventProceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA
Duration: 1999 Apr 121999 Apr 15

Fingerprint

carbon nitrides
Carbon nitride
Ion beams
ion beams
Thin films
Substrates
thin films
Silicon
silicon
X ray photoelectron spectroscopy
nitrogen ions
theses
Amorphous carbon
Buffer layers
Binding energy
Amorphous silicon
Silicon nitride
positive ions
silicon nitrides
amorphous silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, Deuk Yeon ; Kim, Yong Hwan ; Kim, In Kyo ; Baik, Hong Koo. / Effects of substrates on carbon nitride thin films prepared by direct dual ion beam deposition. In: Thin Solid Films. 1999 ; Vol. 355. pp. 239-245.
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Effects of substrates on carbon nitride thin films prepared by direct dual ion beam deposition. / Lee, Deuk Yeon; Kim, Yong Hwan; Kim, In Kyo; Baik, Hong Koo.

In: Thin Solid Films, Vol. 355, 01.11.1999, p. 239-245.

Research output: Contribution to journalConference article

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Y1 - 1999/11/1

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AB - In order to investigate the effects of substrates, amorphous carbon nitride thin films were deposited onto crystalline silicon and amorphous silicon nitride (a-SiNx) substrates using negative-carbon-ion beam and positive-nitrogen-ion beam. The resulting films were characterized using AES, XPS, Raman, and HRTEM. AES C KLL, Si LVV spectra and the result of cross-sectional HRTEM show that SiC was formed only on Si substrate as an intermediate phase, whereas carbon nitride films were formed directly on a-SiNx substrate without SiC intermediate phase. The deconvoluted results of XPS and Raman spectra show that the sp3/sp2 ratio and the atomic density of carbon nitride thin films increase with the deposition thickness except for the buffer layer corresponding to about 500 angstroms thickness. The characteristics of growing process of carbon nitride films on a-SiNx are similar to those of carbon nitride films on silicon. But the absolute values of the former properties, such as sp3/sp2 ratio and ID/IG ratio, are higher than those of the latter properties are. From these results, the different growth behavior of carbon nitride films on theses two substrates can be explained using the binding energy of each element.

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