Effects of surface chemical structure on the mechanical properties of Si1-xGex nanowires

J. W. Ma, W. J. Lee, J. M. Bae, K. S. Jeong, Y. S. Kang, Mann-Ho Cho, J. H. Seo, J. P. Ahn, K. B. Chung, J. Y. Song

Research output: Contribution to journalArticle

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Abstract

The Young's modulus and fracture strength of Si1-xGex nanowires (NWs) as a function of Ge concentration were measured from tensile stress measurements. The Young's modulus of the NWs decreased linearly with increasing Ge content. No evidence was found for a linear relationship between the fracture strength of the NWs and Ge content, which is closely related to the quantity of interstitial Ge atoms contained in the wire. However, by removing some of the interstitial Ge atoms through rapid thermal annealing, a linear relationship could be produced. The discrepancy in the reported strength of Si and Ge NWs between calculated and experimented results could be related to SiO2-x/Si interfacial defects that are found in Si 1-xGex NWs. It was also possible to significantly decrease the number of interfacial defects in the NWs by incorporating a surface passivated Al2O3 layer, which resulted in a substantial increase in fracture strength.

Original languageEnglish
Pages (from-to)1118-1125
Number of pages8
JournalNano letters
Volume13
Issue number3
DOIs
Publication statusPublished - 2013 Mar 13

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Nanowires
nanowires
mechanical properties
Mechanical properties
fracture strength
Fracture toughness
modulus of elasticity
interstitials
Elastic moduli
Atoms
Defects
stress measurement
Rapid thermal annealing
Stress measurement
defects
tensile stress
Tensile stress
atoms
wire
Wire

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Ma, J. W., Lee, W. J., Bae, J. M., Jeong, K. S., Kang, Y. S., Cho, M-H., ... Song, J. Y. (2013). Effects of surface chemical structure on the mechanical properties of Si1-xGex nanowires. Nano letters, 13(3), 1118-1125. https://doi.org/10.1021/nl304485d
Ma, J. W. ; Lee, W. J. ; Bae, J. M. ; Jeong, K. S. ; Kang, Y. S. ; Cho, Mann-Ho ; Seo, J. H. ; Ahn, J. P. ; Chung, K. B. ; Song, J. Y. / Effects of surface chemical structure on the mechanical properties of Si1-xGex nanowires. In: Nano letters. 2013 ; Vol. 13, No. 3. pp. 1118-1125.
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abstract = "The Young's modulus and fracture strength of Si1-xGex nanowires (NWs) as a function of Ge concentration were measured from tensile stress measurements. The Young's modulus of the NWs decreased linearly with increasing Ge content. No evidence was found for a linear relationship between the fracture strength of the NWs and Ge content, which is closely related to the quantity of interstitial Ge atoms contained in the wire. However, by removing some of the interstitial Ge atoms through rapid thermal annealing, a linear relationship could be produced. The discrepancy in the reported strength of Si and Ge NWs between calculated and experimented results could be related to SiO2-x/Si interfacial defects that are found in Si 1-xGex NWs. It was also possible to significantly decrease the number of interfacial defects in the NWs by incorporating a surface passivated Al2O3 layer, which resulted in a substantial increase in fracture strength.",
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Ma, JW, Lee, WJ, Bae, JM, Jeong, KS, Kang, YS, Cho, M-H, Seo, JH, Ahn, JP, Chung, KB & Song, JY 2013, 'Effects of surface chemical structure on the mechanical properties of Si1-xGex nanowires', Nano letters, vol. 13, no. 3, pp. 1118-1125. https://doi.org/10.1021/nl304485d

Effects of surface chemical structure on the mechanical properties of Si1-xGex nanowires. / Ma, J. W.; Lee, W. J.; Bae, J. M.; Jeong, K. S.; Kang, Y. S.; Cho, Mann-Ho; Seo, J. H.; Ahn, J. P.; Chung, K. B.; Song, J. Y.

In: Nano letters, Vol. 13, No. 3, 13.03.2013, p. 1118-1125.

Research output: Contribution to journalArticle

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AU - Ma, J. W.

AU - Lee, W. J.

AU - Bae, J. M.

AU - Jeong, K. S.

AU - Kang, Y. S.

AU - Cho, Mann-Ho

AU - Seo, J. H.

AU - Ahn, J. P.

AU - Chung, K. B.

AU - Song, J. Y.

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N2 - The Young's modulus and fracture strength of Si1-xGex nanowires (NWs) as a function of Ge concentration were measured from tensile stress measurements. The Young's modulus of the NWs decreased linearly with increasing Ge content. No evidence was found for a linear relationship between the fracture strength of the NWs and Ge content, which is closely related to the quantity of interstitial Ge atoms contained in the wire. However, by removing some of the interstitial Ge atoms through rapid thermal annealing, a linear relationship could be produced. The discrepancy in the reported strength of Si and Ge NWs between calculated and experimented results could be related to SiO2-x/Si interfacial defects that are found in Si 1-xGex NWs. It was also possible to significantly decrease the number of interfacial defects in the NWs by incorporating a surface passivated Al2O3 layer, which resulted in a substantial increase in fracture strength.

AB - The Young's modulus and fracture strength of Si1-xGex nanowires (NWs) as a function of Ge concentration were measured from tensile stress measurements. The Young's modulus of the NWs decreased linearly with increasing Ge content. No evidence was found for a linear relationship between the fracture strength of the NWs and Ge content, which is closely related to the quantity of interstitial Ge atoms contained in the wire. However, by removing some of the interstitial Ge atoms through rapid thermal annealing, a linear relationship could be produced. The discrepancy in the reported strength of Si and Ge NWs between calculated and experimented results could be related to SiO2-x/Si interfacial defects that are found in Si 1-xGex NWs. It was also possible to significantly decrease the number of interfacial defects in the NWs by incorporating a surface passivated Al2O3 layer, which resulted in a substantial increase in fracture strength.

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