Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors

Whang Je Woo, Taewook Nam, Hanearl Jung, Il Kwon Oh, Jeong Gyu Song, Han Bo Ram Lee, Wanjoo Maeng, Hyungjun Kim

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3 Citations (Scopus)


The effects of TaN Cu diffusion barrier in Cu-gate ZnO:N thin-film transistors (TFTs) were studied. Bias stress tests were performed on Cu-gate TFTs with atomic layer deposited Al2O3 and HfO2 gate insulators. The mobility, the threshold voltage, and the reliability were significantly improved by applying a TaN diffusion barrier at the interface between the Cu gate and the gate insulator. The reduction in Cu diffusion by the diffusion barrier is a key process that increases device stability and results in improved oxide TFT performance.

Original languageEnglish
Article number7445175
Pages (from-to)599-602
Number of pages4
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - 2016 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Woo, W. J., Nam, T., Jung, H., Oh, I. K., Song, J. G., Lee, H. B. R., Maeng, W., & Kim, H. (2016). Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors. IEEE Electron Device Letters, 37(5), 599-602. [7445175]. https://doi.org/10.1109/LED.2016.2549035