Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors

Whang Je Woo, Taewook Nam, Hanearl Jung, Il Kwon Oh, Jeong Gyu Song, Han Bo Ram Lee, Wanjoo Maeng, Hyungjun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of TaN Cu diffusion barrier in Cu-gate ZnO:N thin-film transistors (TFTs) were studied. Bias stress tests were performed on Cu-gate TFTs with atomic layer deposited Al2O3 and HfO2 gate insulators. The mobility, the threshold voltage, and the reliability were significantly improved by applying a TaN diffusion barrier at the interface between the Cu gate and the gate insulator. The reduction in Cu diffusion by the diffusion barrier is a key process that increases device stability and results in improved oxide TFT performance.

Original languageEnglish
Article number7445175
Pages (from-to)599-602
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number5
DOIs
Publication statusPublished - 2016 May 1

Fingerprint

Diffusion barriers
Thin film transistors
Threshold voltage
Oxide films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Woo, W. J., Nam, T., Jung, H., Oh, I. K., Song, J. G., Lee, H. B. R., ... Kim, H. (2016). Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors. IEEE Electron Device Letters, 37(5), 599-602. [7445175]. https://doi.org/10.1109/LED.2016.2549035
Woo, Whang Je ; Nam, Taewook ; Jung, Hanearl ; Oh, Il Kwon ; Song, Jeong Gyu ; Lee, Han Bo Ram ; Maeng, Wanjoo ; Kim, Hyungjun. / Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors. In: IEEE Electron Device Letters. 2016 ; Vol. 37, No. 5. pp. 599-602.
@article{7cb9149e6f37444e9c059209cc1806ca,
title = "Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors",
abstract = "The effects of TaN Cu diffusion barrier in Cu-gate ZnO:N thin-film transistors (TFTs) were studied. Bias stress tests were performed on Cu-gate TFTs with atomic layer deposited Al2O3 and HfO2 gate insulators. The mobility, the threshold voltage, and the reliability were significantly improved by applying a TaN diffusion barrier at the interface between the Cu gate and the gate insulator. The reduction in Cu diffusion by the diffusion barrier is a key process that increases device stability and results in improved oxide TFT performance.",
author = "Woo, {Whang Je} and Taewook Nam and Hanearl Jung and Oh, {Il Kwon} and Song, {Jeong Gyu} and Lee, {Han Bo Ram} and Wanjoo Maeng and Hyungjun Kim",
year = "2016",
month = "5",
day = "1",
doi = "10.1109/LED.2016.2549035",
language = "English",
volume = "37",
pages = "599--602",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

Woo, WJ, Nam, T, Jung, H, Oh, IK, Song, JG, Lee, HBR, Maeng, W & Kim, H 2016, 'Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors', IEEE Electron Device Letters, vol. 37, no. 5, 7445175, pp. 599-602. https://doi.org/10.1109/LED.2016.2549035

Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors. / Woo, Whang Je; Nam, Taewook; Jung, Hanearl; Oh, Il Kwon; Song, Jeong Gyu; Lee, Han Bo Ram; Maeng, Wanjoo; Kim, Hyungjun.

In: IEEE Electron Device Letters, Vol. 37, No. 5, 7445175, 01.05.2016, p. 599-602.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors

AU - Woo, Whang Je

AU - Nam, Taewook

AU - Jung, Hanearl

AU - Oh, Il Kwon

AU - Song, Jeong Gyu

AU - Lee, Han Bo Ram

AU - Maeng, Wanjoo

AU - Kim, Hyungjun

PY - 2016/5/1

Y1 - 2016/5/1

N2 - The effects of TaN Cu diffusion barrier in Cu-gate ZnO:N thin-film transistors (TFTs) were studied. Bias stress tests were performed on Cu-gate TFTs with atomic layer deposited Al2O3 and HfO2 gate insulators. The mobility, the threshold voltage, and the reliability were significantly improved by applying a TaN diffusion barrier at the interface between the Cu gate and the gate insulator. The reduction in Cu diffusion by the diffusion barrier is a key process that increases device stability and results in improved oxide TFT performance.

AB - The effects of TaN Cu diffusion barrier in Cu-gate ZnO:N thin-film transistors (TFTs) were studied. Bias stress tests were performed on Cu-gate TFTs with atomic layer deposited Al2O3 and HfO2 gate insulators. The mobility, the threshold voltage, and the reliability were significantly improved by applying a TaN diffusion barrier at the interface between the Cu gate and the gate insulator. The reduction in Cu diffusion by the diffusion barrier is a key process that increases device stability and results in improved oxide TFT performance.

UR - http://www.scopus.com/inward/record.url?scp=84964597625&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964597625&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2549035

DO - 10.1109/LED.2016.2549035

M3 - Article

AN - SCOPUS:84964597625

VL - 37

SP - 599

EP - 602

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

M1 - 7445175

ER -

Woo WJ, Nam T, Jung H, Oh IK, Song JG, Lee HBR et al. Effects of TaN Diffusion Barrier on Cu-Gate ZnO:N Thin-Film Transistors. IEEE Electron Device Letters. 2016 May 1;37(5):599-602. 7445175. https://doi.org/10.1109/LED.2016.2549035