Effects of tetraethoxysilane vapor treatment on the cetyltrimethylammonium bromide-templated silica mesoporous low-k thin film with 3D close-packed array of spherical pores

Choo Kyung Han, Sang Bae Jung, Hyung Ho Park

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Cetyltrimethylammonium bromide (CTAB) templated mesoporous silica thin films were deposited on silicon substrate by evaporation-induced self-assembly (EISA) process using a spin coating method. The identification of mesophase with P63/mmc space group was confirmed by using an X-ray diffraction (XRD) technique in Bragg-Brentano geometry along with the reported phase diagram. The determination of optimized spinning time was discussed and it was found that the mesophase formation in dynamic conditions during EISA is more important for the final mesophase formation rather than the modulable steady state. Tetraethoxysilane (TEOS) vapor treatment was conducted to improve the framework stability during calcination and reduce silanol in the framework. XRD patterns and Fourier transformed infrared spectra confirmed that the TEOS vapor treated samples have a strengthened framework and increased hydrophobicity showing the improved leakage current behavior, which suggests its potential application to intermetal dielectric.

Original languageEnglish
Pages (from-to)405-410
Number of pages6
JournalApplied Surface Science
Volume237
Issue number1-4
DOIs
Publication statusPublished - 2004 Oct 15

Fingerprint

Silicon Dioxide
Self assembly
Evaporation
Vapors
Silica
X ray diffraction
Thin films
Spin coating
Silicon
Polymers
Hydrophobicity
Leakage currents
Calcination
Diffraction patterns
Phase diagrams
Infrared radiation
Geometry
Substrates
tetraethoxysilane
cetrimonium

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

@article{4c3136c8c3104a99a7b3dc1b7953da51,
title = "Effects of tetraethoxysilane vapor treatment on the cetyltrimethylammonium bromide-templated silica mesoporous low-k thin film with 3D close-packed array of spherical pores",
abstract = "Cetyltrimethylammonium bromide (CTAB) templated mesoporous silica thin films were deposited on silicon substrate by evaporation-induced self-assembly (EISA) process using a spin coating method. The identification of mesophase with P63/mmc space group was confirmed by using an X-ray diffraction (XRD) technique in Bragg-Brentano geometry along with the reported phase diagram. The determination of optimized spinning time was discussed and it was found that the mesophase formation in dynamic conditions during EISA is more important for the final mesophase formation rather than the modulable steady state. Tetraethoxysilane (TEOS) vapor treatment was conducted to improve the framework stability during calcination and reduce silanol in the framework. XRD patterns and Fourier transformed infrared spectra confirmed that the TEOS vapor treated samples have a strengthened framework and increased hydrophobicity showing the improved leakage current behavior, which suggests its potential application to intermetal dielectric.",
author = "Han, {Choo Kyung} and Jung, {Sang Bae} and Park, {Hyung Ho}",
year = "2004",
month = "10",
day = "15",
doi = "10.1016/S0169-4332(04)00979-1",
language = "English",
volume = "237",
pages = "405--410",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Effects of tetraethoxysilane vapor treatment on the cetyltrimethylammonium bromide-templated silica mesoporous low-k thin film with 3D close-packed array of spherical pores

AU - Han, Choo Kyung

AU - Jung, Sang Bae

AU - Park, Hyung Ho

PY - 2004/10/15

Y1 - 2004/10/15

N2 - Cetyltrimethylammonium bromide (CTAB) templated mesoporous silica thin films were deposited on silicon substrate by evaporation-induced self-assembly (EISA) process using a spin coating method. The identification of mesophase with P63/mmc space group was confirmed by using an X-ray diffraction (XRD) technique in Bragg-Brentano geometry along with the reported phase diagram. The determination of optimized spinning time was discussed and it was found that the mesophase formation in dynamic conditions during EISA is more important for the final mesophase formation rather than the modulable steady state. Tetraethoxysilane (TEOS) vapor treatment was conducted to improve the framework stability during calcination and reduce silanol in the framework. XRD patterns and Fourier transformed infrared spectra confirmed that the TEOS vapor treated samples have a strengthened framework and increased hydrophobicity showing the improved leakage current behavior, which suggests its potential application to intermetal dielectric.

AB - Cetyltrimethylammonium bromide (CTAB) templated mesoporous silica thin films were deposited on silicon substrate by evaporation-induced self-assembly (EISA) process using a spin coating method. The identification of mesophase with P63/mmc space group was confirmed by using an X-ray diffraction (XRD) technique in Bragg-Brentano geometry along with the reported phase diagram. The determination of optimized spinning time was discussed and it was found that the mesophase formation in dynamic conditions during EISA is more important for the final mesophase formation rather than the modulable steady state. Tetraethoxysilane (TEOS) vapor treatment was conducted to improve the framework stability during calcination and reduce silanol in the framework. XRD patterns and Fourier transformed infrared spectra confirmed that the TEOS vapor treated samples have a strengthened framework and increased hydrophobicity showing the improved leakage current behavior, which suggests its potential application to intermetal dielectric.

UR - http://www.scopus.com/inward/record.url?scp=4644223238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4644223238&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(04)00979-1

DO - 10.1016/S0169-4332(04)00979-1

M3 - Article

AN - SCOPUS:4644223238

VL - 237

SP - 405

EP - 410

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -