Abstract
Cetyltrimethylammonium bromide (CTAB) templated mesoporous silica thin films were deposited on silicon substrate by evaporation-induced self-assembly (EISA) process using a spin coating method. The identification of mesophase with P63/mmc space group was confirmed by using an X-ray diffraction (XRD) technique in Bragg-Brentano geometry along with the reported phase diagram. The determination of optimized spinning time was discussed and it was found that the mesophase formation in dynamic conditions during EISA is more important for the final mesophase formation rather than the modulable steady state. Tetraethoxysilane (TEOS) vapor treatment was conducted to improve the framework stability during calcination and reduce silanol in the framework. XRD patterns and Fourier transformed infrared spectra confirmed that the TEOS vapor treated samples have a strengthened framework and increased hydrophobicity showing the improved leakage current behavior, which suggests its potential application to intermetal dielectric.
| Original language | English |
|---|---|
| Pages (from-to) | 405-410 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 237 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2004 Oct 15 |
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All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
Cite this
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Effects of tetraethoxysilane vapor treatment on the cetyltrimethylammonium bromide-templated silica mesoporous low-k thin film with 3D close-packed array of spherical pores. / Han, Choo Kyung; Jung, Sang Bae; Park, Hyung Ho.
In: Applied Surface Science, Vol. 237, No. 1-4, 15.10.2004, p. 405-410.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of tetraethoxysilane vapor treatment on the cetyltrimethylammonium bromide-templated silica mesoporous low-k thin film with 3D close-packed array of spherical pores
AU - Han, Choo Kyung
AU - Jung, Sang Bae
AU - Park, Hyung Ho
PY - 2004/10/15
Y1 - 2004/10/15
N2 - Cetyltrimethylammonium bromide (CTAB) templated mesoporous silica thin films were deposited on silicon substrate by evaporation-induced self-assembly (EISA) process using a spin coating method. The identification of mesophase with P63/mmc space group was confirmed by using an X-ray diffraction (XRD) technique in Bragg-Brentano geometry along with the reported phase diagram. The determination of optimized spinning time was discussed and it was found that the mesophase formation in dynamic conditions during EISA is more important for the final mesophase formation rather than the modulable steady state. Tetraethoxysilane (TEOS) vapor treatment was conducted to improve the framework stability during calcination and reduce silanol in the framework. XRD patterns and Fourier transformed infrared spectra confirmed that the TEOS vapor treated samples have a strengthened framework and increased hydrophobicity showing the improved leakage current behavior, which suggests its potential application to intermetal dielectric.
AB - Cetyltrimethylammonium bromide (CTAB) templated mesoporous silica thin films were deposited on silicon substrate by evaporation-induced self-assembly (EISA) process using a spin coating method. The identification of mesophase with P63/mmc space group was confirmed by using an X-ray diffraction (XRD) technique in Bragg-Brentano geometry along with the reported phase diagram. The determination of optimized spinning time was discussed and it was found that the mesophase formation in dynamic conditions during EISA is more important for the final mesophase formation rather than the modulable steady state. Tetraethoxysilane (TEOS) vapor treatment was conducted to improve the framework stability during calcination and reduce silanol in the framework. XRD patterns and Fourier transformed infrared spectra confirmed that the TEOS vapor treated samples have a strengthened framework and increased hydrophobicity showing the improved leakage current behavior, which suggests its potential application to intermetal dielectric.
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U2 - 10.1016/S0169-4332(04)00979-1
DO - 10.1016/S0169-4332(04)00979-1
M3 - Article
AN - SCOPUS:4644223238
VL - 237
SP - 405
EP - 410
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
ER -