Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors

Byeong Yun Oh, Min Chang Jeong, Moon Ho Ham, Jae Min Myoung

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

We report the fabrication and characteristics of ZnO thin-film transistors (TFTs) having different channel thicknesses. The ZnO films were deposited as active channel layers on SiO2/p-Si substrates by rf magnetron sputtering at room temperature. Effects of the channel thickness on the structural and electrical properties of ZnO TFTs using a bottom-gate configuration were investigated. The crystalline quality and channel conductance of the ZnO films were enhanced as the channel thickness increased. The ZnO TFT with the optimized channel thickness exhibited enhancement mode characteristics with the threshold voltage of 9.9 V, the on-to-off current ratio of ∼10 5 and the field-effect mobility of 0.1 cm2 V-1 s-1. This research implies that ZnO TFTs produced by a simple and low-cost technique could be applicable to electronic devices.

Original languageEnglish
Article number004
Pages (from-to)608-612
Number of pages5
JournalSemiconductor Science and Technology
Volume22
Issue number6
DOIs
Publication statusPublished - 2007 Jun 1

Fingerprint

Thin film transistors
transistors
room temperature
thin films
Temperature
Threshold voltage
Magnetron sputtering
Structural properties
Electric properties
Crystalline materials
Fabrication
threshold voltage
magnetron sputtering
Substrates
electrical properties
Costs
fabrication
augmentation
configurations
electronics

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors. / Oh, Byeong Yun; Jeong, Min Chang; Ham, Moon Ho; Myoung, Jae Min.

In: Semiconductor Science and Technology, Vol. 22, No. 6, 004, 01.06.2007, p. 608-612.

Research output: Contribution to journalArticle

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