Effects of the interfacial layer on electrical characteristics of Al 2 O 3 /TiO 2 /Al 2 O 3 thin films for gate dielectrics

Chang Eun Kim, Ilgu Yun

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Effects of thermal annealing on the electrical properties of Al 2 O 3 /TiO 2 /Al 2 O 3 (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al 2 O 3 -TiO 2 composite and interfacial layer including SiO x in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.

Original languageEnglish
Pages (from-to)3089-3093
Number of pages5
JournalApplied Surface Science
Issue number7
Publication statusPublished - 2012 Jan 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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