Effects of the interfacial layer on electrical characteristics of Al 2O 3/TiO 2/Al 2O 3 thin films for gate dielectrics

Chang Eun Kim, Ilgu Yun

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18 Citations (Scopus)

Abstract

Effects of thermal annealing on the electrical properties of Al 2O 3/TiO 2/Al 2O 3 (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al 2O 3-TiO 2 composite and interfacial layer including SiO x in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.

Original languageEnglish
Pages (from-to)3089-3093
Number of pages5
JournalApplied Surface Science
Volume258
Issue number7
DOIs
Publication statusPublished - 2012 Jan 15

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

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