Effects of thermal annealing on the electrical properties of Al 2O 3/TiO 2/Al 2O 3 (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al 2O 3-TiO 2 composite and interfacial layer including SiO x in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films