Effects of the interfacial layer on electrical characteristics of Al 2O 3/TiO 2/Al 2O 3 thin films for gate dielectrics

Chang Eun Kim, Ilgu Yun

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Effects of thermal annealing on the electrical properties of Al 2O 3/TiO 2/Al 2O 3 (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al 2O 3-TiO 2 composite and interfacial layer including SiO x in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.

Original languageEnglish
Pages (from-to)3089-3093
Number of pages5
JournalApplied Surface Science
Volume258
Issue number7
DOIs
Publication statusPublished - 2012 Jan 15

Fingerprint

Gate dielectrics
Annealing
Thin films
Dielectric films
Atomic layer deposition
Leakage currents
Structural properties
Electric properties
Permittivity
Composite materials
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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Effects of the interfacial layer on electrical characteristics of Al 2O 3/TiO 2/Al 2O 3 thin films for gate dielectrics. / Kim, Chang Eun; Yun, Ilgu.

In: Applied Surface Science, Vol. 258, No. 7, 15.01.2012, p. 3089-3093.

Research output: Contribution to journalArticle

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AB - Effects of thermal annealing on the electrical properties of Al 2O 3/TiO 2/Al 2O 3 (ATA) dielectric thin films prepared by atomic layer deposition are investigated. The structural properties and chemical states in the interfacial layer are analyzed with varying the annealing temperature. The dielectric constant and leakage current are affected by the formation of Al 2O 3-TiO 2 composite and interfacial layer including SiO x in the interface by the annealing. The transformation of interfacial layer at the interface of the ATA/Si substrate due to the annealing is a critical point to apply ATA thin films as gate dielectric layers.

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