Effects of the interfacial layer on electrical properties of TiO 2-based high-k dielectric composite films

C. E. Kim; I. Yun

doi:10.1149/1.3700875

Effects of the interfacial layer on electrical properties of TiO ₂-based high-k dielectric composite films

C. E. Kim, I. Yun

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Effects of interfacial layer on the electrical properties of TiO ₂ based dielectric thin films prepared by atomic layer deposition are investigated. It was confirmed from XPS data that the Hf-silicate and La-silicate interfacial layers including SiO_x were formed in the interface of the HfO₂/TiO₂/Al₂O₃ (HTA) and La₂O₃/TiO₂/Al₂O ₃ (LTA) gate stack structures, respectively. In addition, the dielectric constants and leakage currents of HTA and LTA structures were affected by the formation of Hf-silicate and La-silicate layer in the interface and crystallization of TiO₂ thin film, respectively. It was also found that the LTA thin film annealed at 600°C showed the low equivalent oxide thickness of 0.91 nm and the low leakage current of 4.16×10 ^-6 A/cm² at 4 MV/cm.

Original language	English
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	89-92
Number of pages	4
Edition	3
ISBN (Electronic)	9781607683131
ISBN (Print)	9781566779555
DOIs	https://doi.org/10.1149/1.3700875
Publication status	Published - 2012
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: 2012 May 6 → 2012 May 10

Publication series

Name	ECS Transactions
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	12/5/6 → 12/5/10

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.3700875

Cite this

Kim, C. E., & Yun, I. (2012). Effects of the interfacial layer on electrical properties of TiO ₂-based high-k dielectric composite films. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 89-92). (ECS Transactions; Vol. 45, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700875

Kim, C. E. ; Yun, I. / Effects of the interfacial layer on electrical properties of TiO ₂-based high-k dielectric composite films. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. pp. 89-92 (ECS Transactions; 3).

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title = "Effects of the interfacial layer on electrical properties of TiO 2-based high-k dielectric composite films",

abstract = "Effects of interfacial layer on the electrical properties of TiO 2 based dielectric thin films prepared by atomic layer deposition are investigated. It was confirmed from XPS data that the Hf-silicate and La-silicate interfacial layers including SiOx were formed in the interface of the HfO2/TiO2/Al2O3 (HTA) and La2O3/TiO2/Al2O 3 (LTA) gate stack structures, respectively. In addition, the dielectric constants and leakage currents of HTA and LTA structures were affected by the formation of Hf-silicate and La-silicate layer in the interface and crystallization of TiO2 thin film, respectively. It was also found that the LTA thin film annealed at 600°C showed the low equivalent oxide thickness of 0.91 nm and the low leakage current of 4.16×10 -6 A/cm2 at 4 MV/cm.",

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Kim, CE & Yun, I 2012, Effects of the interfacial layer on electrical properties of TiO ₂-based high-k dielectric composite films. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, Electrochemical Society Inc., pp. 89-92, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 12/5/6. https://doi.org/10.1149/1.3700875

Effects of the interfacial layer on electrical properties of TiO ₂-based high-k dielectric composite films. / Kim, C. E.; Yun, I.

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. p. 89-92 (ECS Transactions; Vol. 45, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Effects of interfacial layer on the electrical properties of TiO 2 based dielectric thin films prepared by atomic layer deposition are investigated. It was confirmed from XPS data that the Hf-silicate and La-silicate interfacial layers including SiOx were formed in the interface of the HfO2/TiO2/Al2O3 (HTA) and La2O3/TiO2/Al2O 3 (LTA) gate stack structures, respectively. In addition, the dielectric constants and leakage currents of HTA and LTA structures were affected by the formation of Hf-silicate and La-silicate layer in the interface and crystallization of TiO2 thin film, respectively. It was also found that the LTA thin film annealed at 600°C showed the low equivalent oxide thickness of 0.91 nm and the low leakage current of 4.16×10 -6 A/cm2 at 4 MV/cm.

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Kim CE, Yun I. Effects of the interfacial layer on electrical properties of TiO ₂-based high-k dielectric composite films. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Electrochemical Society Inc. 2012. p. 89-92. (ECS Transactions; 3). doi: 10.1149/1.3700875