In order to investigate the effects of permanent dipoles on insulator surfaces on the electrical properties of organic thin-film transistors, the authors fabricated insulators with various self-assembled monolayers and similar surface energies. Surprisingly, they found that the field-effect mobility of pentacene thin-film transistors increases by a factor of approximately 20 for insulators with an electron-withdrawing group. This remarkable increase in the field-effect mobility is due to the increase in the hole density of the insulator surface that arises from the increased band bending of the insulator/semiconductor interface.
Bibliographical noteFunding Information:
This work was supported by the ERC Program (R11-2003-006-03005-0) of the MOST, a Grant (F0004022-2006-22) from the Information Display R&D Center under the 21st Century Frontier R&D Program, a Grant (RTI04-01-04) from the Regional Technology Innovation Program of the MOCIE, the BK21 Program of the Ministry of Education and Human Resources Development of Korea, and the Pohang Accelerator Laboratory by providing the 2B1 and 4B1 beam lines used in this study.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)