Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films

Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Lanthanum oxide and lanthanum aluminate thin films were deposited on Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La2O3 films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminum. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication.

Original languageEnglish
Pages (from-to)205-208
Number of pages4
JournalThin Solid Films
Volume504
Issue number1-2
DOIs
Publication statusPublished - 2006 May 10

Fingerprint

Lanthanum oxides
lanthanum oxides
Lanthanum
lanthanum
Thin films
air
thin films
Air
Hydration
hydration
lanthanum oxide
Aluminum
moisture
cleaning
Cleaning
Electric properties
Moisture
electrical properties
Semiconductor materials
aluminum

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

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Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films. / Jun, Jin Hyung; Choi, Doo Jin.

In: Thin Solid Films, Vol. 504, No. 1-2, 10.05.2006, p. 205-208.

Research output: Contribution to journalArticle

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