Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films

Jin Hyung Jun; Doo Jin Choi

doi:10.1016/j.tsf.2005.09.116

Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films

Jin Hyung Jun, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Lanthanum oxide and lanthanum aluminate thin films were deposited on Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La₂O₃ films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminum. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication.

Original language	English
Pages (from-to)	205-208
Number of pages	4
Journal	Thin Solid Films
Volume	504
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.09.116
Publication status	Published - 2006 May 10

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant (KRF-2004-041-D00426).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films",

abstract = "Lanthanum oxide and lanthanum aluminate thin films were deposited on Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La2O3 films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminum. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication.",

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AU - Choi, Doo Jin

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AB - Lanthanum oxide and lanthanum aluminate thin films were deposited on Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La2O3 films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminum. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication.

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