Abstract
Lanthanum oxide and lanthanum aluminate thin films were deposited on Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La2O3 films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminum. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication.
| Original language | English |
|---|---|
| Pages (from-to) | 205-208 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 504 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2006 May 10 |
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All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
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Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films. / Jun, Jin Hyung; Choi, Doo Jin.
In: Thin Solid Films, Vol. 504, No. 1-2, 10.05.2006, p. 205-208.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films
AU - Jun, Jin Hyung
AU - Choi, Doo Jin
PY - 2006/5/10
Y1 - 2006/5/10
N2 - Lanthanum oxide and lanthanum aluminate thin films were deposited on Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La2O3 films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminum. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication.
AB - Lanthanum oxide and lanthanum aluminate thin films were deposited on Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La2O3 films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminum. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication.
UR - http://www.scopus.com/inward/record.url?scp=33644896202&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33644896202&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2005.09.116
DO - 10.1016/j.tsf.2005.09.116
M3 - Article
AN - SCOPUS:33644896202
VL - 504
SP - 205
EP - 208
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -