Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate films

Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to conferencePaper

Abstract

Lanthanum oxide and lanthanum aluminate thin films were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD). The as-grown films were stored in wet ambient and dry ambient for days. The structural and the electrical properties of the films stored in two different ambient were examined in order to investigate the effects of the hydration reaction on the structural and the electrical properties of the films. As the storage time increased, the films stored in wet ambient showed some increases in physical thickness, surface roughness, equivalent oxide thickness and leakage current densities while the films stored in dry ambient did not. In addition, in case of the exposure to moisture, the lanthanum aluminate thin films showed better hydration resistance than the lanthanum oxide thin films.

Original languageEnglish
Pages470-476
Number of pages7
Publication statusPublished - 2004 Dec 1
EventDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Jun, J. H., & Choi, D. J. (2004). Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate films. 470-476. Paper presented at Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium, Honolulu, HI, United States.