Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate films

Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to conferencePaper

Abstract

Lanthanum oxide and lanthanum aluminate thin films were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD). The as-grown films were stored in wet ambient and dry ambient for days. The structural and the electrical properties of the films stored in two different ambient were examined in order to investigate the effects of the hydration reaction on the structural and the electrical properties of the films. As the storage time increased, the films stored in wet ambient showed some increases in physical thickness, surface roughness, equivalent oxide thickness and leakage current densities while the films stored in dry ambient did not. In addition, in case of the exposure to moisture, the lanthanum aluminate thin films showed better hydration resistance than the lanthanum oxide thin films.

Original languageEnglish
Pages470-476
Number of pages7
Publication statusPublished - 2004 Dec 1
EventDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

Fingerprint

Lanthanum oxides
Lanthanum
Air
Thin films
Hydration
Electric properties
Metallorganic chemical vapor deposition
Leakage currents
Oxide films
Current density
Moisture
Surface roughness
Oxides
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Jun, J. H., & Choi, D. J. (2004). Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate films. 470-476. Paper presented at Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium, Honolulu, HI, United States.
Jun, Jin Hyung ; Choi, Doo Jin. / Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate films. Paper presented at Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium, Honolulu, HI, United States.7 p.
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Jun, JH & Choi, DJ 2004, 'Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate films' Paper presented at Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium, Honolulu, HI, United States, 04/10/3 - 04/10/8, pp. 470-476.

Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate films. / Jun, Jin Hyung; Choi, Doo Jin.

2004. 470-476 Paper presented at Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium, Honolulu, HI, United States.

Research output: Contribution to conferencePaper

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N2 - Lanthanum oxide and lanthanum aluminate thin films were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD). The as-grown films were stored in wet ambient and dry ambient for days. The structural and the electrical properties of the films stored in two different ambient were examined in order to investigate the effects of the hydration reaction on the structural and the electrical properties of the films. As the storage time increased, the films stored in wet ambient showed some increases in physical thickness, surface roughness, equivalent oxide thickness and leakage current densities while the films stored in dry ambient did not. In addition, in case of the exposure to moisture, the lanthanum aluminate thin films showed better hydration resistance than the lanthanum oxide thin films.

AB - Lanthanum oxide and lanthanum aluminate thin films were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD). The as-grown films were stored in wet ambient and dry ambient for days. The structural and the electrical properties of the films stored in two different ambient were examined in order to investigate the effects of the hydration reaction on the structural and the electrical properties of the films. As the storage time increased, the films stored in wet ambient showed some increases in physical thickness, surface roughness, equivalent oxide thickness and leakage current densities while the films stored in dry ambient did not. In addition, in case of the exposure to moisture, the lanthanum aluminate thin films showed better hydration resistance than the lanthanum oxide thin films.

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Jun JH, Choi DJ. Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate films. 2004. Paper presented at Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium, Honolulu, HI, United States.