Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor

Min Baik, Hang Kyu Kang, Yu Seon Kang, Kwang Sik Jeong, Changmin Lee, Hyoungsub Kim, Jin Dong Song, Mann Ho Cho

Research output: Contribution to journalArticle

Abstract

Defects in HfO 2 dielectric film caused by indium and arsenide diffusion from InAs were investigated. To investigate the dissociation of InAs during post-deposition annealing (PDA) at 600 °C, we analyzed the ratio of the elements on the surface of the oxide layer and the chemical states by using time-of-flight secondary-ion mass spectroscopy and X-ray photoelectron spectroscopy, respectively. In–As bonding was dissociated and In and As atoms were diffused through the HfO 2 layer from InAs. Fortunately, the diffusion and trap density could be controlled by using a 1-nm-thick Al 2 O 3 passivation layer. In addition, we used the nitridation process to control the trap density. We evaluated the thermal and electrical stability of three samples—HfO 2 /InAs, HfO 2 /Al 2 O 3 /InAs, and nitrided HfO 2 /Al 2 O 3 /InAs—by analyzing the change in trap density before and after PDA at 600 °C and the stress-induced leakage current. In conclusion, the passivation layer effectively improved the thermal and electrical stability, whereas the nitridation process using NH 3 gas did not. Moreover, although nitridation could reduce the interfacial defect states, due to structure distortion, it induced the degradation of the device.

Original languageEnglish
Pages (from-to)1161-1169
Number of pages9
JournalApplied Surface Science
Volume467-468
DOIs
Publication statusPublished - 2019 Feb 15

Fingerprint

Nitridation
thermal stresses
capacitors
Capacitors
Passivation
Defects
defects
traps
Annealing
passivity
thermal stability
Dielectric films
Leakage currents
Indium
annealing
X ray photoelectron spectroscopy
Spectroscopy
indium
Degradation
Atoms

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Baik, Min ; Kang, Hang Kyu ; Kang, Yu Seon ; Jeong, Kwang Sik ; Lee, Changmin ; Kim, Hyoungsub ; Song, Jin Dong ; Cho, Mann Ho. / Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor. In: Applied Surface Science. 2019 ; Vol. 467-468. pp. 1161-1169.
@article{a41ca25c82a440f5995ff1103629d179,
title = "Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor",
abstract = "Defects in HfO 2 dielectric film caused by indium and arsenide diffusion from InAs were investigated. To investigate the dissociation of InAs during post-deposition annealing (PDA) at 600 °C, we analyzed the ratio of the elements on the surface of the oxide layer and the chemical states by using time-of-flight secondary-ion mass spectroscopy and X-ray photoelectron spectroscopy, respectively. In–As bonding was dissociated and In and As atoms were diffused through the HfO 2 layer from InAs. Fortunately, the diffusion and trap density could be controlled by using a 1-nm-thick Al 2 O 3 passivation layer. In addition, we used the nitridation process to control the trap density. We evaluated the thermal and electrical stability of three samples—HfO 2 /InAs, HfO 2 /Al 2 O 3 /InAs, and nitrided HfO 2 /Al 2 O 3 /InAs—by analyzing the change in trap density before and after PDA at 600 °C and the stress-induced leakage current. In conclusion, the passivation layer effectively improved the thermal and electrical stability, whereas the nitridation process using NH 3 gas did not. Moreover, although nitridation could reduce the interfacial defect states, due to structure distortion, it induced the degradation of the device.",
author = "Min Baik and Kang, {Hang Kyu} and Kang, {Yu Seon} and Jeong, {Kwang Sik} and Changmin Lee and Hyoungsub Kim and Song, {Jin Dong} and Cho, {Mann Ho}",
year = "2019",
month = "2",
day = "15",
doi = "10.1016/j.apsusc.2018.10.212",
language = "English",
volume = "467-468",
pages = "1161--1169",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor. / Baik, Min; Kang, Hang Kyu; Kang, Yu Seon; Jeong, Kwang Sik; Lee, Changmin; Kim, Hyoungsub; Song, Jin Dong; Cho, Mann Ho.

In: Applied Surface Science, Vol. 467-468, 15.02.2019, p. 1161-1169.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor

AU - Baik, Min

AU - Kang, Hang Kyu

AU - Kang, Yu Seon

AU - Jeong, Kwang Sik

AU - Lee, Changmin

AU - Kim, Hyoungsub

AU - Song, Jin Dong

AU - Cho, Mann Ho

PY - 2019/2/15

Y1 - 2019/2/15

N2 - Defects in HfO 2 dielectric film caused by indium and arsenide diffusion from InAs were investigated. To investigate the dissociation of InAs during post-deposition annealing (PDA) at 600 °C, we analyzed the ratio of the elements on the surface of the oxide layer and the chemical states by using time-of-flight secondary-ion mass spectroscopy and X-ray photoelectron spectroscopy, respectively. In–As bonding was dissociated and In and As atoms were diffused through the HfO 2 layer from InAs. Fortunately, the diffusion and trap density could be controlled by using a 1-nm-thick Al 2 O 3 passivation layer. In addition, we used the nitridation process to control the trap density. We evaluated the thermal and electrical stability of three samples—HfO 2 /InAs, HfO 2 /Al 2 O 3 /InAs, and nitrided HfO 2 /Al 2 O 3 /InAs—by analyzing the change in trap density before and after PDA at 600 °C and the stress-induced leakage current. In conclusion, the passivation layer effectively improved the thermal and electrical stability, whereas the nitridation process using NH 3 gas did not. Moreover, although nitridation could reduce the interfacial defect states, due to structure distortion, it induced the degradation of the device.

AB - Defects in HfO 2 dielectric film caused by indium and arsenide diffusion from InAs were investigated. To investigate the dissociation of InAs during post-deposition annealing (PDA) at 600 °C, we analyzed the ratio of the elements on the surface of the oxide layer and the chemical states by using time-of-flight secondary-ion mass spectroscopy and X-ray photoelectron spectroscopy, respectively. In–As bonding was dissociated and In and As atoms were diffused through the HfO 2 layer from InAs. Fortunately, the diffusion and trap density could be controlled by using a 1-nm-thick Al 2 O 3 passivation layer. In addition, we used the nitridation process to control the trap density. We evaluated the thermal and electrical stability of three samples—HfO 2 /InAs, HfO 2 /Al 2 O 3 /InAs, and nitrided HfO 2 /Al 2 O 3 /InAs—by analyzing the change in trap density before and after PDA at 600 °C and the stress-induced leakage current. In conclusion, the passivation layer effectively improved the thermal and electrical stability, whereas the nitridation process using NH 3 gas did not. Moreover, although nitridation could reduce the interfacial defect states, due to structure distortion, it induced the degradation of the device.

UR - http://www.scopus.com/inward/record.url?scp=85055905239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85055905239&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2018.10.212

DO - 10.1016/j.apsusc.2018.10.212

M3 - Article

AN - SCOPUS:85055905239

VL - 467-468

SP - 1161

EP - 1169

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -