Abstract
Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).
Original language | English |
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Pages (from-to) | 720-724 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 189-190 |
DOIs | |
Publication status | Published - 1998 Jun 15 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry