Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry