Abstract
Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).
| Original language | English |
|---|---|
| Pages (from-to) | 720-724 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 189-190 |
| DOIs | |
| Publication status | Published - 1998 Jun 15 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Kim, C. Y., Kim, S. W., Hong, C. H., Kim, D. W., Baik, H. K., & Whang, C. N. (1998). Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems. Journal of Crystal Growth, 189-190, 720-724. https://doi.org/10.1016/S0022-0248(98)00270-X