Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems

C. Y. Kim; S. W. Kim; C. H. Hong; D. W. Kim; H. K. Baik; C. N. Whang

doi:10.1016/S0022-0248(98)00270-X

Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems

C. Y. Kim, S. W. Kim, C. H. Hong, D. W. Kim, H. K. Baik, C. N. Whang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10^-5 Ω cm² above 700°C. XRD, AES, and TEM experiments show that TiSi_x (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSi_x with a low work function (3.94-3.99 eV in case of TiSi).

Original language	English
Pages (from-to)	720-724
Number of pages	5
Journal	Journal of Crystal Growth
Volume	189-190
DOIs	https://doi.org/10.1016/S0022-0248(98)00270-X
Publication status	Published - 1998 Jun 15

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)00270-X

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@article{429222edc289460c94d27bb69516e51c,

title = "Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems",

abstract = "Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).",

author = "Kim, {C. Y.} and Kim, {S. W.} and Hong, {C. H.} and Kim, {D. W.} and Baik, {H. K.} and Whang, {C. N.}",

year = "1998",

month = jun,

day = "15",

doi = "10.1016/S0022-0248(98)00270-X",

language = "English",

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TY - JOUR

T1 - Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems

AU - Kim, C. Y.

AU - Kim, S. W.

AU - Hong, C. H.

AU - Kim, D. W.

AU - Baik, H. K.

AU - Whang, C. N.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).

AB - Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).

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