Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems

C. Y. Kim; S. W. Kim; C. H. Hong; D. W. Kim; H. K. Baik; C. N. Whang

doi:10.1016/S0022-0248(98)00270-X

Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems

C. Y. Kim, S. W. Kim, C. H. Hong, D. W. Kim, H. K. Baik, C. N. Whang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10^-5 Ω cm² above 700°C. XRD, AES, and TEM experiments show that TiSi_x (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSi_x with a low work function (3.94-3.99 eV in case of TiSi).

Original language	English
Pages (from-to)	720-724
Number of pages	5
Journal	Journal of Crystal Growth
Volume	189-190
DOIs	https://doi.org/10.1016/S0022-0248(98)00270-X
Publication status	Published - 1998 Jun 15

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All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Kim, C. Y., Kim, S. W., Hong, C. H., Kim, D. W., Baik, H. K., & Whang, C. N. (1998). Effects of titanium suicide on AuSiTi/n-GaN ohmic contact systems. Journal of Crystal Growth, 189-190, 720-724. https://doi.org/10.1016/S0022-0248(98)00270-X

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abstract = "Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).",

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AU - Kim, C. Y.

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AU - Hong, C. H.

AU - Kim, D. W.

AU - Baik, H. K.

AU - Whang, C. N.

PY - 1998/6/15

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N2 - Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).

AB - Si embedded AuTi/n-GaN contact schemes have been developed for a low barrier ohmic contact to n-GaN. Contacts subjected to rapid thermal annealing temperature from 400 to 900°C for 10 s exhibited linear current-voltage characteristics and had low specific contact resistance of mid-10-5 Ω cm2 above 700°C. XRD, AES, and TEM experiments show that TiSix (x = 1 and 2) layer was formed at the metal/GaN interface above 500°C and the contact interface was abrupt. Ohmic contact was related to the formation of TiSix with a low work function (3.94-3.99 eV in case of TiSi).

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10.1016/S0022-0248(98)00270-X