Effects of two-step growth by employing Zn-rich and O-rich growth conditions on properties of (112̄0) ZnO films grown by plasma-assisted molecular beam epitaxy on sapphire

Seok Kyu Han, Jae Goo Kim, Jung Hyun Kim, Soon Ku Hong, Jae Wook Lee, Jeong Yong Lee, Jung Hoon Song, Yoon Sung Nam, Soo Kyung Chang, Takafumi Yao

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8 Citations (Scopus)

Abstract

The authors report properties of a -plane ZnO films on r -plane sapphire substrates by plasma-assisted molecular beam epitaxy in which two-step growth is employed. They show that the two-step growth is effective in improving structural and optical properties of a -plane ZnO films. Here, the two-step growth is preceded by growing the first layer under Zn-rich (O-rich) conditions and growing the second layer under O-rich (Zn-rich) conditions. All the grown samples show striated anisotropic morphology. The samples with the first, thin, O-rich layer plus the second, thick, Zn-rich layer show smaller root-mean-square (rms) roughness than those with the first, thin, Zn-rich layer plus the second, thick, O-rich layer. The sample with the 20-nm -thick first layer grown under O-rich condition shows the smallest rms roughness of 1.06 nm, which is a smaller rms value than that of the sample grown under the single-step, stoichiometric condition. This sample shows the highest intensity of D X0 emission at 3.392 eV and small full width at half maxima of (11 2- 0) and (10 1- 1) x-ray rocking curves, which indicate the good crystal quality.

Original languageEnglish
Pages (from-to)1635-1640
Number of pages6
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume27
Issue number3
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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