Effects of ultra-violet treatment on electrical characteristics of solution-processed oxide thin-film transistors

Jeong Soo Lee, Seung Min Song, Dong Won Kang, Yong Hoon Kim, Jang Yeon Kwon, Min Koo Hana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We fabricated solution-processed IGZO and ZTO TFTs with annealing temperature of 350 °C employing Ultra-Violet (UV) radiation treatment. The electrical characteristics of solutionprocessed oxide TFTs would be considerably improved by employing UV treatment on the active layer of oxide TFTs. UV treatment increased electron concentration of IGZO and ZTO active layer because electrons were generated with increasing O-H bonding by UV in oxide semiconductors. The threshold voltage decreased and the saturation mobility increased by UV treatment due to the increase of electron concentration at low annealing temperature of 350 °C in solution-processed oxide TFTs. Saturation mobility of solution-processed IGZO TFTs increased from 0.31 cm2/V sec (without UV treatment) to 2.96 cm2/V sec (with 1 h UV treatment) and that of solution-processed ZTO TFTs increased from 0.01 cm2/V sec (without UV treatment) to 0.30 cm2/V sec (with 1 h UV treatment) with UV treatment.

Original languageEnglish
Title of host publicationThin Film Transistors 11, TFT 2012
Pages121-127
Number of pages7
Edition8
DOIs
Publication statusPublished - 2012 Dec 1
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
Duration: 2012 Oct 82012 Oct 10

Publication series

NameECS Transactions
Number8
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
CountryUnited States
CityHonolulu, HI
Period12/10/812/10/10

Fingerprint

Thin film transistors
Oxide films
Oxides
Electrons
Annealing
Saturation (materials composition)
Threshold voltage
Ultraviolet radiation
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, J. S., Song, S. M., Kang, D. W., Kim, Y. H., Kwon, J. Y., & Hana, M. K. (2012). Effects of ultra-violet treatment on electrical characteristics of solution-processed oxide thin-film transistors. In Thin Film Transistors 11, TFT 2012 (8 ed., pp. 121-127). (ECS Transactions; Vol. 50, No. 8). https://doi.org/10.1149/05008.0121ecst
Lee, Jeong Soo ; Song, Seung Min ; Kang, Dong Won ; Kim, Yong Hoon ; Kwon, Jang Yeon ; Hana, Min Koo. / Effects of ultra-violet treatment on electrical characteristics of solution-processed oxide thin-film transistors. Thin Film Transistors 11, TFT 2012. 8. ed. 2012. pp. 121-127 (ECS Transactions; 8).
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abstract = "We fabricated solution-processed IGZO and ZTO TFTs with annealing temperature of 350 °C employing Ultra-Violet (UV) radiation treatment. The electrical characteristics of solutionprocessed oxide TFTs would be considerably improved by employing UV treatment on the active layer of oxide TFTs. UV treatment increased electron concentration of IGZO and ZTO active layer because electrons were generated with increasing O-H bonding by UV in oxide semiconductors. The threshold voltage decreased and the saturation mobility increased by UV treatment due to the increase of electron concentration at low annealing temperature of 350 °C in solution-processed oxide TFTs. Saturation mobility of solution-processed IGZO TFTs increased from 0.31 cm2/V sec (without UV treatment) to 2.96 cm2/V sec (with 1 h UV treatment) and that of solution-processed ZTO TFTs increased from 0.01 cm2/V sec (without UV treatment) to 0.30 cm2/V sec (with 1 h UV treatment) with UV treatment.",
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Lee, JS, Song, SM, Kang, DW, Kim, YH, Kwon, JY & Hana, MK 2012, Effects of ultra-violet treatment on electrical characteristics of solution-processed oxide thin-film transistors. in Thin Film Transistors 11, TFT 2012. 8 edn, ECS Transactions, no. 8, vol. 50, pp. 121-127, 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012, Honolulu, HI, United States, 12/10/8. https://doi.org/10.1149/05008.0121ecst

Effects of ultra-violet treatment on electrical characteristics of solution-processed oxide thin-film transistors. / Lee, Jeong Soo; Song, Seung Min; Kang, Dong Won; Kim, Yong Hoon; Kwon, Jang Yeon; Hana, Min Koo.

Thin Film Transistors 11, TFT 2012. 8. ed. 2012. p. 121-127 (ECS Transactions; Vol. 50, No. 8).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee JS, Song SM, Kang DW, Kim YH, Kwon JY, Hana MK. Effects of ultra-violet treatment on electrical characteristics of solution-processed oxide thin-film transistors. In Thin Film Transistors 11, TFT 2012. 8 ed. 2012. p. 121-127. (ECS Transactions; 8). https://doi.org/10.1149/05008.0121ecst