We fabricated solution-processed IGZO and ZTO TFTs with annealing temperature of 350 °C employing Ultra-Violet (UV) radiation treatment. The electrical characteristics of solutionprocessed oxide TFTs would be considerably improved by employing UV treatment on the active layer of oxide TFTs. UV treatment increased electron concentration of IGZO and ZTO active layer because electrons were generated with increasing O-H bonding by UV in oxide semiconductors. The threshold voltage decreased and the saturation mobility increased by UV treatment due to the increase of electron concentration at low annealing temperature of 350 °C in solution-processed oxide TFTs. Saturation mobility of solution-processed IGZO TFTs increased from 0.31 cm2/V sec (without UV treatment) to 2.96 cm2/V sec (with 1 h UV treatment) and that of solution-processed ZTO TFTs increased from 0.01 cm2/V sec (without UV treatment) to 0.30 cm2/V sec (with 1 h UV treatment) with UV treatment.