Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Keun Woo Lee, Kyung Min Kim, Kon Yi Heo, Sung Kye Park, Seok Kiu Lee, Hyun Jae Kim

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.

Original languageEnglish
Pages (from-to)280-285
Number of pages6
JournalCurrent Applied Physics
Volume11
Issue number3
DOIs
Publication statusPublished - 2011 May 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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