Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Keun Woo Lee, Kyung Min Kim, Kon Yi Heo, Sung Kye Park, Seok Kiu Lee, Hyun Jae Kim

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.

Original languageEnglish
Pages (from-to)280-285
Number of pages6
JournalCurrent Applied Physics
Volume11
Issue number3
DOIs
Publication statusPublished - 2011 May 1

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Carbon Nanotubes
Indium
Thin film transistors
Zinc oxide
ultraviolet radiation
zinc oxides
Oxide films
indium
Carbon nanotubes
nanotubes
transistors
carbon nanotubes
Doping (additives)
thin films
Lighting
illumination
Electron traps

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Lee, Keun Woo ; Kim, Kyung Min ; Heo, Kon Yi ; Park, Sung Kye ; Lee, Seok Kiu ; Kim, Hyun Jae. / Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors. In: Current Applied Physics. 2011 ; Vol. 11, No. 3. pp. 280-285.
@article{ef00681db96f444485fb1903c829ed81,
title = "Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors",
abstract = "We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.",
author = "Lee, {Keun Woo} and Kim, {Kyung Min} and Heo, {Kon Yi} and Park, {Sung Kye} and Lee, {Seok Kiu} and Kim, {Hyun Jae}",
year = "2011",
month = "5",
day = "1",
doi = "10.1016/j.cap.2010.07.020",
language = "English",
volume = "11",
pages = "280--285",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "3",

}

Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors. / Lee, Keun Woo; Kim, Kyung Min; Heo, Kon Yi; Park, Sung Kye; Lee, Seok Kiu; Kim, Hyun Jae.

In: Current Applied Physics, Vol. 11, No. 3, 01.05.2011, p. 280-285.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

AU - Lee, Keun Woo

AU - Kim, Kyung Min

AU - Heo, Kon Yi

AU - Park, Sung Kye

AU - Lee, Seok Kiu

AU - Kim, Hyun Jae

PY - 2011/5/1

Y1 - 2011/5/1

N2 - We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.

AB - We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.

UR - http://www.scopus.com/inward/record.url?scp=79951673458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951673458&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2010.07.020

DO - 10.1016/j.cap.2010.07.020

M3 - Article

AN - SCOPUS:79951673458

VL - 11

SP - 280

EP - 285

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 3

ER -