Abstract
We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.
| Original language | English |
|---|---|
| Pages (from-to) | 280-285 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 11 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2011 May 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
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Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors. / Lee, Keun Woo; Kim, Kyung Min; Heo, Kon Yi; Park, Sung Kye; Lee, Seok Kiu; Kim, Hyun Jae.
In: Current Applied Physics, Vol. 11, No. 3, 01.05.2011, p. 280-285.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors
AU - Lee, Keun Woo
AU - Kim, Kyung Min
AU - Heo, Kon Yi
AU - Park, Sung Kye
AU - Lee, Seok Kiu
AU - Kim, Hyun Jae
PY - 2011/5/1
Y1 - 2011/5/1
N2 - We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.
AB - We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.
UR - http://www.scopus.com/inward/record.url?scp=79951673458&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951673458&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2010.07.020
DO - 10.1016/j.cap.2010.07.020
M3 - Article
AN - SCOPUS:79951673458
VL - 11
SP - 280
EP - 285
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 3
ER -