Abstract
We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.
| Original language | English |
|---|---|
| Pages (from-to) | 280-285 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 11 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2011 May 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Lee, K. W., Kim, K. M., Heo, K. Y., Park, S. K., Lee, S. K., & Kim, H. J. (2011). Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors. Current Applied Physics, 11(3), 280-285. https://doi.org/10.1016/j.cap.2010.07.020