We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics after switching off the UV light. To explain these unique photo-response behaviors, we believe that SWNTs play an important role as carrier transport rods during device operation and as electron traps in the device off-state, along with electron-hole pairs due to the UV light illumination.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R0A-2007-000-10044-0 (2007)) and was supported by Hynix semiconductor Inc.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)