Effects on electronics exposed to high-power microwaves on the basis of a relativistic backward-wave oscillator operating on the X-band

Sun Hong Min, Ohjoon Kwon, Matlabjon Sattorov, Hoechun Jung, In Keun Baek, Seontae Kim, Jin Young Jeong, Jungmin Jang, Dongpyo Hong, Ranajoy Bhattacharya, Ranjan Kumar Barik, Anirban Bera, Seunghyuk Park, Jihwan Ahn, Sang Heun Lee, Young Joong Yoon, Gun Sik Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An analysis of the effects of electromagnetic pulses from a high-power microwave (HPM) radiation technique is conducted using a relativistic backward-wave oscillator (RBWO) which uses relativistic electron beams in vacuum circuits. The application described here is based on a relativistic electron device and uses relativistic electron beams to generate high-power electromagnetic radiation. The RBWO was fabricated to operate in a relativistic region with a gamma factor (γ) of 2 at an acceleration voltage of 500 kV. A mode-converted relativistic back-wave oscillator with an antenna that converts TM01 to TE11 was designed and fabricated because the electric field of the center in the RBWO circuit is null. The effects on electronic devices by HPM radiation and exposure were assessed. The effects on electronic devices exposed to HPMs, the failure of information equipment, and modulation of and interference with the received signal through a theoretical model of the threshold power relative to the influence on the target were confirmed in a high-output microwave exposure environment. Particularly, information devices containing semiconductors can undergo serious failures and breakdowns due to the thermal secondary breakdown caused by the high-output transient electromagnetic waves, and it is a theoretical consideration that reverse voltage occurs due to the generation of surge current when caught in the PN-junction region. Finally, the range of power regarding the effectiveness of the electromagnetic coupling of electronics exposed to HPM radiation was estimated.

Original languageEnglish
Pages (from-to)1875-1901
Number of pages27
JournalJournal of Electromagnetic Waves and Applications
Volume31
Issue number17
DOIs
Publication statusPublished - 2017 Nov 22

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy(all)
  • Electrical and Electronic Engineering

Cite this

Min, S. H., Kwon, O., Sattorov, M., Jung, H., Baek, I. K., Kim, S., Jeong, J. Y., Jang, J., Hong, D., Bhattacharya, R., Barik, R. K., Bera, A., Park, S., Ahn, J., Lee, S. H., Yoon, Y. J., & Park, G. S. (2017). Effects on electronics exposed to high-power microwaves on the basis of a relativistic backward-wave oscillator operating on the X-band. Journal of Electromagnetic Waves and Applications, 31(17), 1875-1901. https://doi.org/10.1080/09205071.2017.1354728