Abstract
In this paper, we first analyze the efficiency of importance sampling (IS) method in spin transfer torque random access memory (STT-RAM) design with industry-compatible model parameter. Commonly used normal fitting method cannot estimate the yield accurately unless an output distribution follows the Gaussian distribution. The efficiency of IS method is significantly degraded when industry-compatible model parameters are used because most variables affected by process variation are not controllable. With industry-compatible 45-nm model parameters, Monte Carlo HSPICE simulation results show that the required number of simulations to satisfy error rate less than 5% should be greater than 50,000.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 400-403 |
| Number of pages | 4 |
| Volume | 2016-March |
| ISBN (Electronic) | 9781509002467 |
| DOIs | |
| Publication status | Published - 2016 Mar 23 |
| Event | IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 - Cairo, Egypt Duration: 2015 Dec 6 → 2015 Dec 9 |
Other
| Other | IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 |
|---|---|
| Country | Egypt |
| City | Cairo |
| Period | 15/12/6 → 15/12/9 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter. / Na, Taehui; Jeong, Hanwool; Jung, Seongook; Kim, Jung Pill; Kang, Seung H.
2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015. Vol. 2016-March Institute of Electrical and Electronics Engineers Inc., 2016. p. 400-403 7440333.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter
AU - Na, Taehui
AU - Jeong, Hanwool
AU - Jung, Seongook
AU - Kim, Jung Pill
AU - Kang, Seung H.
PY - 2016/3/23
Y1 - 2016/3/23
N2 - In this paper, we first analyze the efficiency of importance sampling (IS) method in spin transfer torque random access memory (STT-RAM) design with industry-compatible model parameter. Commonly used normal fitting method cannot estimate the yield accurately unless an output distribution follows the Gaussian distribution. The efficiency of IS method is significantly degraded when industry-compatible model parameters are used because most variables affected by process variation are not controllable. With industry-compatible 45-nm model parameters, Monte Carlo HSPICE simulation results show that the required number of simulations to satisfy error rate less than 5% should be greater than 50,000.
AB - In this paper, we first analyze the efficiency of importance sampling (IS) method in spin transfer torque random access memory (STT-RAM) design with industry-compatible model parameter. Commonly used normal fitting method cannot estimate the yield accurately unless an output distribution follows the Gaussian distribution. The efficiency of IS method is significantly degraded when industry-compatible model parameters are used because most variables affected by process variation are not controllable. With industry-compatible 45-nm model parameters, Monte Carlo HSPICE simulation results show that the required number of simulations to satisfy error rate less than 5% should be greater than 50,000.
UR - http://www.scopus.com/inward/record.url?scp=84964831694&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964831694&partnerID=8YFLogxK
U2 - 10.1109/ICECS.2015.7440333
DO - 10.1109/ICECS.2015.7440333
M3 - Conference contribution
AN - SCOPUS:84964831694
VL - 2016-March
SP - 400
EP - 403
BT - 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -