Efficiency enhancement of the Doherty amplifier for 3.5 GHz WiMAX application using class-F circuitry

Jun Chul Park, Dongsu Kim, Chan Sei Yoo, Woo Sung Lee, Jong Gwan Yook, Cheol Koo Hahn

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This article presents a high-power and high-efficiency saturated Doherty amplifier using a GaN high electron mobility transistor for 3.5 GHz Worldwide Interoperability for Microwave Access application. The saturated Doherty amplifier is a Doherty amplifier based on class-F amplifiers, resulting in higher efficiency than a conventional Doherty amplifier. The distributed-type harmonic control circuit is located between a power transistor and an output matching circuit. From the measured results for a continuous wave of 3.5 GHz, the saturated Doherty amplifier attains a high P3dB of 45 dBm and a power gain of about 8.8 dB. Also, the proposed Doherty amplifier provides a high power-added-efficiency (PAE) of 37.7% and a drain efficiency of 42.7% at 6-dB back-off output power region from P3dB, which are 8.7% and 5.7% higher than those of the conventional Doherty amplifier. Compared to the single class-AB amplifier, we obtain 17.7% and 19.7% improvement of PAE and drain efficiency, respectively.

Original languageEnglish
Pages (from-to)570-573
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume52
Issue number3
DOIs
Publication statusPublished - 2010 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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