Efficient and reliable NAND flash channel for high-speed solid state drives

Joohyeong Yoon, Won Seob Jeong, Won Jeon, Won Woo Ro

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current generation NAND Flash Memories (NFMs) focused on optimizing data transfer time. However, depends on our analysis, the proportion of control overhead in channel efficiency has increased by up to 30.1%. By increasing the transmission rate of the control signals, it is possible to improve I/O bandwidth of NFM by 11.6%. However, this method can lead to reliability problems. Thus, we propose error detection schemes in order to compensate the reliability of the control signals. Experimental results show that the proposed scheme can improve the I/O bandwidth by about 11.1% and have a reliability for burst errors.

Original languageEnglish
Title of host publicationInternational Conference on Electronics, Information and Communication, ICEIC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538647547
DOIs
Publication statusPublished - 2018 Apr 2
Event17th International Conference on Electronics, Information and Communication, ICEIC 2018 - Honolulu, United States
Duration: 2018 Jan 242018 Jan 27

Publication series

NameInternational Conference on Electronics, Information and Communication, ICEIC 2018
Volume2018-January

Other

Other17th International Conference on Electronics, Information and Communication, ICEIC 2018
CountryUnited States
CityHonolulu
Period18/1/2418/1/27

Fingerprint

Flash memory
Bandwidth
Error detection
Data transfer

All Science Journal Classification (ASJC) codes

  • Information Systems
  • Computer Networks and Communications
  • Computer Science Applications
  • Signal Processing
  • Electrical and Electronic Engineering

Cite this

Yoon, J., Jeong, W. S., Jeon, W., & Ro, W. W. (2018). Efficient and reliable NAND flash channel for high-speed solid state drives. In International Conference on Electronics, Information and Communication, ICEIC 2018 (pp. 1-4). (International Conference on Electronics, Information and Communication, ICEIC 2018; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ELINFOCOM.2018.8330553
Yoon, Joohyeong ; Jeong, Won Seob ; Jeon, Won ; Ro, Won Woo. / Efficient and reliable NAND flash channel for high-speed solid state drives. International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4 (International Conference on Electronics, Information and Communication, ICEIC 2018).
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Yoon, J, Jeong, WS, Jeon, W & Ro, WW 2018, Efficient and reliable NAND flash channel for high-speed solid state drives. in International Conference on Electronics, Information and Communication, ICEIC 2018. International Conference on Electronics, Information and Communication, ICEIC 2018, vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 17th International Conference on Electronics, Information and Communication, ICEIC 2018, Honolulu, United States, 18/1/24. https://doi.org/10.23919/ELINFOCOM.2018.8330553

Efficient and reliable NAND flash channel for high-speed solid state drives. / Yoon, Joohyeong; Jeong, Won Seob; Jeon, Won; Ro, Won Woo.

International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4 (International Conference on Electronics, Information and Communication, ICEIC 2018; Vol. 2018-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Yoon J, Jeong WS, Jeon W, Ro WW. Efficient and reliable NAND flash channel for high-speed solid state drives. In International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4. (International Conference on Electronics, Information and Communication, ICEIC 2018). https://doi.org/10.23919/ELINFOCOM.2018.8330553