Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion

Jack T. Ly, Edmund K. Burnett, Simil Thomas, Areej Aljarb, Yao Liu, Soohyung Park, Stephen Rosa, Yeonjin Yi, Hyunbok Lee, Todd Emrick, Thomas P. Russell, Jean Luc Brédas, Alejandro L. Briseno

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.

Original languageEnglish
Pages (from-to)40070-40077
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number46
DOIs
Publication statusPublished - 2018 Nov 21

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Electron mobility
Torsional stress
Polymers
Semiconductor materials
Thiazoles
Dihedral angle
Thin film transistors
Naphthalene
Density functional theory
Conformations
Transistors
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Ly, Jack T. ; Burnett, Edmund K. ; Thomas, Simil ; Aljarb, Areej ; Liu, Yao ; Park, Soohyung ; Rosa, Stephen ; Yi, Yeonjin ; Lee, Hyunbok ; Emrick, Todd ; Russell, Thomas P. ; Brédas, Jean Luc ; Briseno, Alejandro L. / Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 46. pp. 40070-40077.
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abstract = "An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.",
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Ly, JT, Burnett, EK, Thomas, S, Aljarb, A, Liu, Y, Park, S, Rosa, S, Yi, Y, Lee, H, Emrick, T, Russell, TP, Brédas, JL & Briseno, AL 2018, 'Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion', ACS Applied Materials and Interfaces, vol. 10, no. 46, pp. 40070-40077. https://doi.org/10.1021/acsami.8b11234

Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion. / Ly, Jack T.; Burnett, Edmund K.; Thomas, Simil; Aljarb, Areej; Liu, Yao; Park, Soohyung; Rosa, Stephen; Yi, Yeonjin; Lee, Hyunbok; Emrick, Todd; Russell, Thomas P.; Brédas, Jean Luc; Briseno, Alejandro L.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 46, 21.11.2018, p. 40070-40077.

Research output: Contribution to journalArticle

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AU - Ly, Jack T.

AU - Burnett, Edmund K.

AU - Thomas, Simil

AU - Aljarb, Areej

AU - Liu, Yao

AU - Park, Soohyung

AU - Rosa, Stephen

AU - Yi, Yeonjin

AU - Lee, Hyunbok

AU - Emrick, Todd

AU - Russell, Thomas P.

AU - Brédas, Jean Luc

AU - Briseno, Alejandro L.

PY - 2018/11/21

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AB - An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.

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