Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion

Jack T. Ly; Edmund K. Burnett; Simil Thomas; Areej Aljarb; Yao Liu; Soohyung Park; Stephen Rosa; Yeonjin Yi; Hyunbok Lee; Todd Emrick; Thomas P. Russell; Jean Luc Brédas; Alejandro L. Briseno

doi:10.1021/acsami.8b11234

Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion

Jack T. Ly, Edmund K. Burnett, Simil Thomas, Areej Aljarb, Yao Liu, Soohyung Park, Stephen Rosa, Yeonjin Yi, Hyunbok Lee, Todd Emrick, Thomas P. Russell, Jean Luc Brédas, Alejandro L. Briseno

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm²/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.

Original language	English
Pages (from-to)	40070-40077
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	46
DOIs	https://doi.org/10.1021/acsami.8b11234
Publication status	Published - 2018 Nov 21

Bibliographical note

Funding Information:
We acknowledge the Office of Naval Research (Awards N00014-16-1-2612 and N000147-14-1-0053 at Penn State and Award N00014-17-1-2208 at Georgia Tech). Y.L. and T.P.R. were supported by the Office of Naval Research, Materials Division, under contract N00014-17-1-2244. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation under award DMR1332208. We would like to also thank Megan Matta and Sarah Sheffield, graduate students of Penn State, for conducting TGA and DSC measurements provided in the SI.

Funding Information:
We acknowledge the Office of Naval Research (Awards N00014-16-1-2612 and N000147-14-1-0053 at Penn State and Award N00014-17-1-2208 at Georgia Tech). Y.L. and T.P.R. were supported by the Office of Naval Research, Materials Division, under contract N00014-17-1-2244. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation under award DMR1332208.

Publisher Copyright:
Copyright © 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/acsami.8b11234

Cite this

Ly, J. T., Burnett, E. K., Thomas, S., Aljarb, A., Liu, Y., Park, S., Rosa, S., Yi, Y., Lee, H., Emrick, T., Russell, T. P., Brédas, J. L., & Briseno, A. L. (2018). Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion. ACS Applied Materials and Interfaces, 10(46), 40070-40077. https://doi.org/10.1021/acsami.8b11234

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title = "Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion",

abstract = "An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.",

author = "Ly, {Jack T.} and Burnett, {Edmund K.} and Simil Thomas and Areej Aljarb and Yao Liu and Soohyung Park and Stephen Rosa and Yeonjin Yi and Hyunbok Lee and Todd Emrick and Russell, {Thomas P.} and Br{\'e}das, {Jean Luc} and Briseno, {Alejandro L.}",

note = "Funding Information: We acknowledge the Office of Naval Research (Awards N00014-16-1-2612 and N000147-14-1-0053 at Penn State and Award N00014-17-1-2208 at Georgia Tech). Y.L. and T.P.R. were supported by the Office of Naval Research, Materials Division, under contract N00014-17-1-2244. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation under award DMR1332208. We would like to also thank Megan Matta and Sarah Sheffield, graduate students of Penn State, for conducting TGA and DSC measurements provided in the SI. Funding Information: We acknowledge the Office of Naval Research (Awards N00014-16-1-2612 and N000147-14-1-0053 at Penn State and Award N00014-17-1-2208 at Georgia Tech). Y.L. and T.P.R. were supported by the Office of Naval Research, Materials Division, under contract N00014-17-1-2244. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation under award DMR1332208. Publisher Copyright: Copyright {\textcopyright} 2018 American Chemical Society.",

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Ly, JT, Burnett, EK, Thomas, S, Aljarb, A, Liu, Y, Park, S, Rosa, S, Yi, Y, Lee, H, Emrick, T, Russell, TP, Brédas, JL & Briseno, AL 2018, 'Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion', ACS Applied Materials and Interfaces, vol. 10, no. 46, pp. 40070-40077. https://doi.org/10.1021/acsami.8b11234

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AU - Ly, Jack T.

AU - Burnett, Edmund K.

AU - Thomas, Simil

AU - Aljarb, Areej

AU - Liu, Yao

AU - Park, Soohyung

AU - Rosa, Stephen

AU - Yi, Yeonjin

AU - Lee, Hyunbok

AU - Emrick, Todd

AU - Russell, Thomas P.

AU - Brédas, Jean Luc

AU - Briseno, Alejandro L.

N1 - Funding Information: We acknowledge the Office of Naval Research (Awards N00014-16-1-2612 and N000147-14-1-0053 at Penn State and Award N00014-17-1-2208 at Georgia Tech). Y.L. and T.P.R. were supported by the Office of Naval Research, Materials Division, under contract N00014-17-1-2244. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation under award DMR1332208. We would like to also thank Megan Matta and Sarah Sheffield, graduate students of Penn State, for conducting TGA and DSC measurements provided in the SI. Funding Information: We acknowledge the Office of Naval Research (Awards N00014-16-1-2612 and N000147-14-1-0053 at Penn State and Award N00014-17-1-2208 at Georgia Tech). Y.L. and T.P.R. were supported by the Office of Naval Research, Materials Division, under contract N00014-17-1-2244. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation under award DMR1332208. Publisher Copyright: Copyright © 2018 American Chemical Society.

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Y1 - 2018/11/21

N2 - An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.

AB - An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.

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Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion

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