An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.
Bibliographical noteFunding Information:
We acknowledge the Office of Naval Research (Awards N00014-16-1-2612 and N000147-14-1-0053 at Penn State and Award N00014-17-1-2208 at Georgia Tech). Y.L. and T.P.R. were supported by the Office of Naval Research, Materials Division, under contract N00014-17-1-2244. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation under award DMR1332208. We would like to also thank Megan Matta and Sarah Sheffield, graduate students of Penn State, for conducting TGA and DSC measurements provided in the SI.
All Science Journal Classification (ASJC) codes
- Materials Science(all)