Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion

Jack T. Ly, Edmund K. Burnett, Simil Thomas, Areej Aljarb, Yao Liu, Soohyung Park, Stephen Rosa, Yeonjin Yi, Hyunbok Lee, Todd Emrick, Thomas P. Russell, Jean Luc Brédas, Alejandro L. Briseno

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2 Citations (Scopus)

Abstract

An all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.

Original languageEnglish
Pages (from-to)40070-40077
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number46
DOIs
Publication statusPublished - 2018 Nov 21

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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    Ly, J. T., Burnett, E. K., Thomas, S., Aljarb, A., Liu, Y., Park, S., Rosa, S., Yi, Y., Lee, H., Emrick, T., Russell, T. P., Brédas, J. L., & Briseno, A. L. (2018). Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion. ACS Applied Materials and Interfaces, 10(46), 40070-40077. https://doi.org/10.1021/acsami.8b11234