A single heterostructure InGaAlAs/InP phase modulator utilizing the quadratic electrooptic effect (QEO) is reported for the first time. The calculated value of QEO coefficient from the measurements is 3.7 × 10-19 m2/V2 at 80 meV below the band edge. In addition, the linear electrooptic effect (LEO) coefficient is estimated to be 1.2 × 10-12 m/V which is comparable to that of GaAs. The propagation loss of a single mode ridge waveguide is in the range of 1.5-1.7 dB/cm which is better than the previously reported value in this material system. The measured single mode phase shifts are 5.5 and 2.8°/Vmm for TE and TM polarizations, respectively. These values are the largest values reported so far in InGaAlAs system.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering