TY - GEN
T1 - Efficient TSV repair method for 3D memories
AU - Kim, Ilwoong
AU - Cho, Keewon
AU - Kang, Sungho
PY - 2013
Y1 - 2013
N2 - Through-silicon-via (TSV) based 3D stacked memory is recognized as the next generation memory architecture but its low TSV yield is one of the manufacturing cost factors. In this paper, an efficient TSV repair method is proposed for 3D memories. The proposed method uses a new 2-dimensional 1-4 switching technique to enable efficient repair of clustered TSV faults using repair circuitry with reasonable area overhead. Therefore, the proposed TSV repair method can contribute the improvement of TSV yield for 3D memories.
AB - Through-silicon-via (TSV) based 3D stacked memory is recognized as the next generation memory architecture but its low TSV yield is one of the manufacturing cost factors. In this paper, an efficient TSV repair method is proposed for 3D memories. The proposed method uses a new 2-dimensional 1-4 switching technique to enable efficient repair of clustered TSV faults using repair circuitry with reasonable area overhead. Therefore, the proposed TSV repair method can contribute the improvement of TSV yield for 3D memories.
UR - http://www.scopus.com/inward/record.url?scp=84906905080&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906905080&partnerID=8YFLogxK
U2 - 10.1109/ISOCC.2013.6863974
DO - 10.1109/ISOCC.2013.6863974
M3 - Conference contribution
AN - SCOPUS:84906905080
SN - 9781479911417
T3 - ISOCC 2013 - 2013 International SoC Design Conference
SP - 17
EP - 18
BT - ISOCC 2013 - 2013 International SoC Design Conference
PB - IEEE Computer Society
T2 - 2013 International SoC Design Conference, ISOCC 2013
Y2 - 17 November 2013 through 19 November 2013
ER -