TY - JOUR
T1 - Elastic modulus of amorphous Ge2Sb2Te5 thin film measured by uniaxial microtensile test
AU - Choi, Yunjung
AU - Lee, Young Kook
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010/3
Y1 - 2010/3
N2 - The elastic property of an amorphous Ge2Sb2Te5 thin film was investigated by uniaxial microtensile test using amorphous Ge2Sb2Te5 films deposited on both sides of a polyimide substrate. The elastic modulus of the amorphous Ge2Sb2Te5 thin film was determined by the rule of mixture as 20.2 ± 1.3 GPa, comparable to that converted from the biaxial modulus measured by wafer curvature measurements. However, the elastic modulus measured by nanoindentation tests is higher than those measured by uniaxial microtensile test and by wafer curvature measurements, as the viscoelastic recovery component of the amorphous Ge2Sb2Te5 film is not implied in the initial slope of the unloading curve in nanoindentation tests.
AB - The elastic property of an amorphous Ge2Sb2Te5 thin film was investigated by uniaxial microtensile test using amorphous Ge2Sb2Te5 films deposited on both sides of a polyimide substrate. The elastic modulus of the amorphous Ge2Sb2Te5 thin film was determined by the rule of mixture as 20.2 ± 1.3 GPa, comparable to that converted from the biaxial modulus measured by wafer curvature measurements. However, the elastic modulus measured by nanoindentation tests is higher than those measured by uniaxial microtensile test and by wafer curvature measurements, as the viscoelastic recovery component of the amorphous Ge2Sb2Te5 film is not implied in the initial slope of the unloading curve in nanoindentation tests.
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U2 - 10.3365/eml.2010.03.23
DO - 10.3365/eml.2010.03.23
M3 - Article
AN - SCOPUS:77955737756
VL - 6
SP - 23
EP - 26
JO - Electronic Materials Letters
JF - Electronic Materials Letters
SN - 1738-8090
IS - 1
ER -