Abstract
Ferroelectric materials are of interest due to their applications, such as in ferroelectric field effect transistor memory (FeFET). For this application, reducing retention time according to the leakage current is an important matter. Ferroelectric materials are able to be improved through multilayer fabrication of ferroelectric films. This study investigated multilayer ferroelectric thin films using strong candidate ferroelectric materials such as Bi 3.25 La 0.75 Ti 3 O 12 (BLT) and Nd 2 Ti 2 O 7 (NT). The ferroelectric materials were prepared with a stable interface using broad stoichiometry, without occurrence of a secondary phase or a disruption in stoichiometry. For the characterization of BLT, NT, and BLT/NT multilayer ferroelectric films, various analyses and measurements were carried out, including X-ray diffraction, X-ray photoelectron spectroscopy, currentvoltage and polarizationvoltage. The multilayer ferroelectric films showed improved ferroelectric properties using multilayer fabrication with a highly insulating ferroelectric film.
| Original language | English |
|---|---|
| Pages (from-to) | 1017-1020 |
| Number of pages | 4 |
| Journal | Journal of the Ceramic Society of Japan |
| Volume | 118 |
| Issue number | 1383 |
| DOIs | |
| Publication status | Published - 2010 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Electric and ferroelectric properties of a multilayer film of Nd 2 Ti 2 O 7 and Bi 3.25 La 0.75 Ti 3 O 12 for use as a ferroelectric field effect transistor . / Lee, Hong Sub; Choi, Hye Jung; Chung, Sung Woong; Park, Hyung-Ho.
In: Journal of the Ceramic Society of Japan, Vol. 118, No. 1383, 01.01.2010, p. 1017-1020.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electric and ferroelectric properties of a multilayer film of Nd 2 Ti 2 O 7 and Bi 3.25 La 0.75 Ti 3 O 12 for use as a ferroelectric field effect transistor
AU - Lee, Hong Sub
AU - Choi, Hye Jung
AU - Chung, Sung Woong
AU - Park, Hyung-Ho
PY - 2010/1/1
Y1 - 2010/1/1
N2 - Ferroelectric materials are of interest due to their applications, such as in ferroelectric field effect transistor memory (FeFET). For this application, reducing retention time according to the leakage current is an important matter. Ferroelectric materials are able to be improved through multilayer fabrication of ferroelectric films. This study investigated multilayer ferroelectric thin films using strong candidate ferroelectric materials such as Bi 3.25 La 0.75 Ti 3 O 12 (BLT) and Nd 2 Ti 2 O 7 (NT). The ferroelectric materials were prepared with a stable interface using broad stoichiometry, without occurrence of a secondary phase or a disruption in stoichiometry. For the characterization of BLT, NT, and BLT/NT multilayer ferroelectric films, various analyses and measurements were carried out, including X-ray diffraction, X-ray photoelectron spectroscopy, currentvoltage and polarizationvoltage. The multilayer ferroelectric films showed improved ferroelectric properties using multilayer fabrication with a highly insulating ferroelectric film.
AB - Ferroelectric materials are of interest due to their applications, such as in ferroelectric field effect transistor memory (FeFET). For this application, reducing retention time according to the leakage current is an important matter. Ferroelectric materials are able to be improved through multilayer fabrication of ferroelectric films. This study investigated multilayer ferroelectric thin films using strong candidate ferroelectric materials such as Bi 3.25 La 0.75 Ti 3 O 12 (BLT) and Nd 2 Ti 2 O 7 (NT). The ferroelectric materials were prepared with a stable interface using broad stoichiometry, without occurrence of a secondary phase or a disruption in stoichiometry. For the characterization of BLT, NT, and BLT/NT multilayer ferroelectric films, various analyses and measurements were carried out, including X-ray diffraction, X-ray photoelectron spectroscopy, currentvoltage and polarizationvoltage. The multilayer ferroelectric films showed improved ferroelectric properties using multilayer fabrication with a highly insulating ferroelectric film.
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U2 - 10.2109/jcersj2.118.1017
DO - 10.2109/jcersj2.118.1017
M3 - Article
AN - SCOPUS:78149347320
VL - 118
SP - 1017
EP - 1020
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
SN - 1882-0743
IS - 1383
ER -