Electric and ferroelectric properties of a multilayer film of Nd 2 Ti 2 O 7 and Bi 3.25 La 0.75 Ti 3 O 12 for use as a ferroelectric field effect transistor

Hong Sub Lee, Hye Jung Choi, Sung Woong Chung, Hyung-Ho Park

Research output: Contribution to journalArticle

Abstract

Ferroelectric materials are of interest due to their applications, such as in ferroelectric field effect transistor memory (FeFET). For this application, reducing retention time according to the leakage current is an important matter. Ferroelectric materials are able to be improved through multilayer fabrication of ferroelectric films. This study investigated multilayer ferroelectric thin films using strong candidate ferroelectric materials such as Bi 3.25 La 0.75 Ti 3 O 12 (BLT) and Nd 2 Ti 2 O 7 (NT). The ferroelectric materials were prepared with a stable interface using broad stoichiometry, without occurrence of a secondary phase or a disruption in stoichiometry. For the characterization of BLT, NT, and BLT/NT multilayer ferroelectric films, various analyses and measurements were carried out, including X-ray diffraction, X-ray photoelectron spectroscopy, currentvoltage and polarizationvoltage. The multilayer ferroelectric films showed improved ferroelectric properties using multilayer fabrication with a highly insulating ferroelectric film.

Original languageEnglish
Pages (from-to)1017-1020
Number of pages4
JournalJournal of the Ceramic Society of Japan
Volume118
Issue number1383
DOIs
Publication statusPublished - 2010 Jan 1

Fingerprint

ferroelectric materials
Multilayer films
Field effect transistors
Ferroelectric materials
Ferroelectric films
field effect transistors
stoichiometry
Multilayers
Stoichiometry
fabrication
Fabrication
Ferroelectric thin films
leakage
x rays
photoelectron spectroscopy
occurrences
Leakage currents
X ray photoelectron spectroscopy
thin films
diffraction

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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title = "Electric and ferroelectric properties of a multilayer film of Nd 2 Ti 2 O 7 and Bi 3.25 La 0.75 Ti 3 O 12 for use as a ferroelectric field effect transistor",
abstract = "Ferroelectric materials are of interest due to their applications, such as in ferroelectric field effect transistor memory (FeFET). For this application, reducing retention time according to the leakage current is an important matter. Ferroelectric materials are able to be improved through multilayer fabrication of ferroelectric films. This study investigated multilayer ferroelectric thin films using strong candidate ferroelectric materials such as Bi 3.25 La 0.75 Ti 3 O 12 (BLT) and Nd 2 Ti 2 O 7 (NT). The ferroelectric materials were prepared with a stable interface using broad stoichiometry, without occurrence of a secondary phase or a disruption in stoichiometry. For the characterization of BLT, NT, and BLT/NT multilayer ferroelectric films, various analyses and measurements were carried out, including X-ray diffraction, X-ray photoelectron spectroscopy, currentvoltage and polarizationvoltage. The multilayer ferroelectric films showed improved ferroelectric properties using multilayer fabrication with a highly insulating ferroelectric film.",
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Electric and ferroelectric properties of a multilayer film of Nd 2 Ti 2 O 7 and Bi 3.25 La 0.75 Ti 3 O 12 for use as a ferroelectric field effect transistor . / Lee, Hong Sub; Choi, Hye Jung; Chung, Sung Woong; Park, Hyung-Ho.

In: Journal of the Ceramic Society of Japan, Vol. 118, No. 1383, 01.01.2010, p. 1017-1020.

Research output: Contribution to journalArticle

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AU - Choi, Hye Jung

AU - Chung, Sung Woong

AU - Park, Hyung-Ho

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