Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

Hyeong Ho Park, Hong Sub Lee, Hyung-Ho Park, Ross H. Hill, Yun Taek Hwang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2 , respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

Original languageEnglish
Pages (from-to)4197-4200
Number of pages4
JournalApplied Surface Science
Volume255
Issue number7
DOIs
Publication statusPublished - 2009 Jan 15

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Multilayer films
Ferroelectric materials
Metals
Dry etching
Substrates
Lanthanum
Bismuth
Electric space charge
Leakage currents
lead titanate zirconate
Fatigue of materials
Polarization
Defects
Electrodes

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Park, Hyeong Ho ; Lee, Hong Sub ; Park, Hyung-Ho ; Hill, Ross H. ; Hwang, Yun Taek. / Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition. In: Applied Surface Science. 2009 ; Vol. 255, No. 7. pp. 4197-4200.
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abstract = "The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2 , respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.",
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Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition. / Park, Hyeong Ho; Lee, Hong Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek.

In: Applied Surface Science, Vol. 255, No. 7, 15.01.2009, p. 4197-4200.

Research output: Contribution to journalArticle

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AU - Lee, Hong Sub

AU - Park, Hyung-Ho

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AB - The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2 , respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

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