Abstract
The electric and ferroelectric properties of lead zirconate titanate and strontium bismuth tantalate multilayer films prepared using photosensitive starting precursors were characterized. The electric and ferroelectric properties were investigated by characterization of the effect of stacking order of four ferroelectric layers of PZT or SBT in the multilayer films of 4-PZT, PZT/2-SBT/PZT, SBT/2-PZT/SBT, and 4-SBT. The Pr value of the 4-SBT multilayer film was relatively small (6 μC/cm2) and a two times higher value (12 μC/cm2) was obtained with the SBT/2-PZT/SBT multilayer film. The films with SBT layers at the top and bottom showed improved leakage current and fatigue resistance compared to the films with PZT layers at the top and bottom. It was revealed that the defect dipole was reduced at the SBT/Pt interface due to a self-regulation layer such as (Bi2O2)2+ in the SBT film. Also, the bottom layer on the Pt substrate showed a significant influence on the growth orientation of the entire ferroelectric films.
| Original language | English |
|---|---|
| Pages (from-to) | 696-700 |
| Number of pages | 5 |
| Journal | Sensors and Actuators, B: Chemical |
| Volume | 130 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2008 Mar 28 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry
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Electric and ferroelectric properties of PZT/SBT multilayer films prepared by photochemical metal-organic deposition. / Park, Hyeong Ho; Park, Hyung-Ho; Kim, Tae Song; Hill, Ross H.
In: Sensors and Actuators, B: Chemical, Vol. 130, No. 2, 28.03.2008, p. 696-700.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electric and ferroelectric properties of PZT/SBT multilayer films prepared by photochemical metal-organic deposition
AU - Park, Hyeong Ho
AU - Park, Hyung-Ho
AU - Kim, Tae Song
AU - Hill, Ross H.
PY - 2008/3/28
Y1 - 2008/3/28
N2 - The electric and ferroelectric properties of lead zirconate titanate and strontium bismuth tantalate multilayer films prepared using photosensitive starting precursors were characterized. The electric and ferroelectric properties were investigated by characterization of the effect of stacking order of four ferroelectric layers of PZT or SBT in the multilayer films of 4-PZT, PZT/2-SBT/PZT, SBT/2-PZT/SBT, and 4-SBT. The Pr value of the 4-SBT multilayer film was relatively small (6 μC/cm2) and a two times higher value (12 μC/cm2) was obtained with the SBT/2-PZT/SBT multilayer film. The films with SBT layers at the top and bottom showed improved leakage current and fatigue resistance compared to the films with PZT layers at the top and bottom. It was revealed that the defect dipole was reduced at the SBT/Pt interface due to a self-regulation layer such as (Bi2O2)2+ in the SBT film. Also, the bottom layer on the Pt substrate showed a significant influence on the growth orientation of the entire ferroelectric films.
AB - The electric and ferroelectric properties of lead zirconate titanate and strontium bismuth tantalate multilayer films prepared using photosensitive starting precursors were characterized. The electric and ferroelectric properties were investigated by characterization of the effect of stacking order of four ferroelectric layers of PZT or SBT in the multilayer films of 4-PZT, PZT/2-SBT/PZT, SBT/2-PZT/SBT, and 4-SBT. The Pr value of the 4-SBT multilayer film was relatively small (6 μC/cm2) and a two times higher value (12 μC/cm2) was obtained with the SBT/2-PZT/SBT multilayer film. The films with SBT layers at the top and bottom showed improved leakage current and fatigue resistance compared to the films with PZT layers at the top and bottom. It was revealed that the defect dipole was reduced at the SBT/Pt interface due to a self-regulation layer such as (Bi2O2)2+ in the SBT film. Also, the bottom layer on the Pt substrate showed a significant influence on the growth orientation of the entire ferroelectric films.
UR - http://www.scopus.com/inward/record.url?scp=40949164722&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=40949164722&partnerID=8YFLogxK
U2 - 10.1016/j.snb.2007.10.053
DO - 10.1016/j.snb.2007.10.053
M3 - Article
AN - SCOPUS:40949164722
VL - 130
SP - 696
EP - 700
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
SN - 0925-4005
IS - 2
ER -