Electric and ferroelectric properties of PZT/SBT multilayer films prepared by photochemical metal-organic deposition

Hyeong Ho Park, Hyung-Ho Park, Tae Song Kim, Ross H. Hill

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The electric and ferroelectric properties of lead zirconate titanate and strontium bismuth tantalate multilayer films prepared using photosensitive starting precursors were characterized. The electric and ferroelectric properties were investigated by characterization of the effect of stacking order of four ferroelectric layers of PZT or SBT in the multilayer films of 4-PZT, PZT/2-SBT/PZT, SBT/2-PZT/SBT, and 4-SBT. The Pr value of the 4-SBT multilayer film was relatively small (6 μC/cm2) and a two times higher value (12 μC/cm2) was obtained with the SBT/2-PZT/SBT multilayer film. The films with SBT layers at the top and bottom showed improved leakage current and fatigue resistance compared to the films with PZT layers at the top and bottom. It was revealed that the defect dipole was reduced at the SBT/Pt interface due to a self-regulation layer such as (Bi2O2)2+ in the SBT film. Also, the bottom layer on the Pt substrate showed a significant influence on the growth orientation of the entire ferroelectric films.

Original languageEnglish
Pages (from-to)696-700
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume130
Issue number2
DOIs
Publication statusPublished - 2008 Mar 28

Fingerprint

Multilayer films
Ferroelectric materials
Metals
metals
Ferroelectric films
Bismuth
Strontium
Leakage currents
Fatigue of materials
Defects
Substrates
strontium
bismuth
leakage
dipoles
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{7a4906e09b5f4d5cbd44283f17cde46e,
title = "Electric and ferroelectric properties of PZT/SBT multilayer films prepared by photochemical metal-organic deposition",
abstract = "The electric and ferroelectric properties of lead zirconate titanate and strontium bismuth tantalate multilayer films prepared using photosensitive starting precursors were characterized. The electric and ferroelectric properties were investigated by characterization of the effect of stacking order of four ferroelectric layers of PZT or SBT in the multilayer films of 4-PZT, PZT/2-SBT/PZT, SBT/2-PZT/SBT, and 4-SBT. The Pr value of the 4-SBT multilayer film was relatively small (6 μC/cm2) and a two times higher value (12 μC/cm2) was obtained with the SBT/2-PZT/SBT multilayer film. The films with SBT layers at the top and bottom showed improved leakage current and fatigue resistance compared to the films with PZT layers at the top and bottom. It was revealed that the defect dipole was reduced at the SBT/Pt interface due to a self-regulation layer such as (Bi2O2)2+ in the SBT film. Also, the bottom layer on the Pt substrate showed a significant influence on the growth orientation of the entire ferroelectric films.",
author = "Park, {Hyeong Ho} and Hyung-Ho Park and Kim, {Tae Song} and Hill, {Ross H.}",
year = "2008",
month = "3",
day = "28",
doi = "10.1016/j.snb.2007.10.053",
language = "English",
volume = "130",
pages = "696--700",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "2",

}

Electric and ferroelectric properties of PZT/SBT multilayer films prepared by photochemical metal-organic deposition. / Park, Hyeong Ho; Park, Hyung-Ho; Kim, Tae Song; Hill, Ross H.

In: Sensors and Actuators, B: Chemical, Vol. 130, No. 2, 28.03.2008, p. 696-700.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electric and ferroelectric properties of PZT/SBT multilayer films prepared by photochemical metal-organic deposition

AU - Park, Hyeong Ho

AU - Park, Hyung-Ho

AU - Kim, Tae Song

AU - Hill, Ross H.

PY - 2008/3/28

Y1 - 2008/3/28

N2 - The electric and ferroelectric properties of lead zirconate titanate and strontium bismuth tantalate multilayer films prepared using photosensitive starting precursors were characterized. The electric and ferroelectric properties were investigated by characterization of the effect of stacking order of four ferroelectric layers of PZT or SBT in the multilayer films of 4-PZT, PZT/2-SBT/PZT, SBT/2-PZT/SBT, and 4-SBT. The Pr value of the 4-SBT multilayer film was relatively small (6 μC/cm2) and a two times higher value (12 μC/cm2) was obtained with the SBT/2-PZT/SBT multilayer film. The films with SBT layers at the top and bottom showed improved leakage current and fatigue resistance compared to the films with PZT layers at the top and bottom. It was revealed that the defect dipole was reduced at the SBT/Pt interface due to a self-regulation layer such as (Bi2O2)2+ in the SBT film. Also, the bottom layer on the Pt substrate showed a significant influence on the growth orientation of the entire ferroelectric films.

AB - The electric and ferroelectric properties of lead zirconate titanate and strontium bismuth tantalate multilayer films prepared using photosensitive starting precursors were characterized. The electric and ferroelectric properties were investigated by characterization of the effect of stacking order of four ferroelectric layers of PZT or SBT in the multilayer films of 4-PZT, PZT/2-SBT/PZT, SBT/2-PZT/SBT, and 4-SBT. The Pr value of the 4-SBT multilayer film was relatively small (6 μC/cm2) and a two times higher value (12 μC/cm2) was obtained with the SBT/2-PZT/SBT multilayer film. The films with SBT layers at the top and bottom showed improved leakage current and fatigue resistance compared to the films with PZT layers at the top and bottom. It was revealed that the defect dipole was reduced at the SBT/Pt interface due to a self-regulation layer such as (Bi2O2)2+ in the SBT film. Also, the bottom layer on the Pt substrate showed a significant influence on the growth orientation of the entire ferroelectric films.

UR - http://www.scopus.com/inward/record.url?scp=40949164722&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40949164722&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2007.10.053

DO - 10.1016/j.snb.2007.10.053

M3 - Article

AN - SCOPUS:40949164722

VL - 130

SP - 696

EP - 700

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 2

ER -