The electric and ferroelectric properties of lead zirconate titanate and strontium bismuth tantalate multilayer films prepared using photosensitive starting precursors were characterized. The electric and ferroelectric properties were investigated by characterization of the effect of stacking order of four ferroelectric layers of PZT or SBT in the multilayer films of 4-PZT, PZT/2-SBT/PZT, SBT/2-PZT/SBT, and 4-SBT. The Pr value of the 4-SBT multilayer film was relatively small (6 μC/cm2) and a two times higher value (12 μC/cm2) was obtained with the SBT/2-PZT/SBT multilayer film. The films with SBT layers at the top and bottom showed improved leakage current and fatigue resistance compared to the films with PZT layers at the top and bottom. It was revealed that the defect dipole was reduced at the SBT/Pt interface due to a self-regulation layer such as (Bi2O2)2+ in the SBT film. Also, the bottom layer on the Pt substrate showed a significant influence on the growth orientation of the entire ferroelectric films.
Bibliographical noteFunding Information:
This research was supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr ), which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology. The experiments at the PLS were supported in part by the MOST and the POSTECH.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry