Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction

Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Tavakol Nazari, Kyunghwan Oh, Seongil Im

Research output: Contribution to journalArticle

100 Citations (Scopus)

Abstract

Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 103, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W-1, and an external quantum efficiency of 85% under blue-light illumination.

Original languageEnglish
Pages (from-to)3216-3222
Number of pages7
JournalAdvanced Materials
Volume28
Issue number16
DOIs
Publication statusPublished - 2016 Apr 27

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Heterojunctions
Quantum efficiency
Diodes
Lighting
Glass
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Pezeshki, Atiye ; Shokouh, Seyed Hossein Hosseini ; Nazari, Tavakol ; Oh, Kyunghwan ; Im, Seongil. / Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction. In: Advanced Materials. 2016 ; Vol. 28, No. 16. pp. 3216-3222.
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Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction. / Pezeshki, Atiye; Shokouh, Seyed Hossein Hosseini; Nazari, Tavakol; Oh, Kyunghwan; Im, Seongil.

In: Advanced Materials, Vol. 28, No. 16, 27.04.2016, p. 3216-3222.

Research output: Contribution to journalArticle

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