Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 103, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W-1, and an external quantum efficiency of 85% under blue-light illumination.
Bibliographical noteFunding Information:
A. P. and S. H. H. S. equally contributed to this work. The authors acknowledge financial support from NRF (NRL program: Grant No. 2014R1A2A1A01004815), Nano-Materials Technology Development Program (Grant No. 2012M3A7B4034985), and Brain Korea 21 plus Program, the Yonsei University (Future-leading Research Initiative of 2014: Grant No. 2014-22-0168).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering