Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure

Ah Jin Cho, Seok Daniel Namgung, Hojoong Kim, Jang Yeon Kwon

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS2/ReSe2 vdW heterostructure was fabricated, and its electrical and photovoltaic behaviors were discovered. The heterojunction showed a gate-tunable diode property with the maximum rectification ratio of 3150. Under illumination, it exhibited a photovoltaic effect with an efficiency of ∼0.5%. This study outlines the potential of Re-based 2D semiconductors and their integration by forming a vdW heterojunction for use in optoelectronic devices.

Original languageEnglish
Article number076101
JournalAPL Materials
Volume5
Issue number7
DOIs
Publication statusPublished - 2017 Jul 1

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Heterojunctions
Photovoltaic effects
Lattice mismatch
Optoelectronic devices
Diodes
Lighting
Semiconductor materials
rhenium sulfide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

Cho, Ah Jin ; Namgung, Seok Daniel ; Kim, Hojoong ; Kwon, Jang Yeon. / Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure. In: APL Materials. 2017 ; Vol. 5, No. 7.
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Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure. / Cho, Ah Jin; Namgung, Seok Daniel; Kim, Hojoong; Kwon, Jang Yeon.

In: APL Materials, Vol. 5, No. 7, 076101, 01.07.2017.

Research output: Contribution to journalArticle

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