The control of magnetoresistance of a lateral spin valve with bias applied to a gate placed outside the channel region is demonstrated. The spin valve channel consists of an InAs/In0.53Ga0.47As/In 0.52Al0.48As two-dimensional electron gas lattice matched to (001) InP. The polarizer and analyzer contacts are made with 35 nm type B MnAs/In0.52Al0.48As Schottky tunnel barriers. The magnetoresistance changes from 0.14% to 4% at 10 K in a device in which the spin transport is in the direction of magnetization of the polarizer and analyzer contacts. The effect is absent in a GaAs channel spin valve and other control devices indicating that the change in magnetoresistance is due to Rashba spin-orbit coupling.
Bibliographical noteFunding Information:
This work is supported by the National Science Foundation (Grant. No. ECCS-0754367 and the Office of Naval Research (Grant No. N00014–09–1–0086). Useful discussions with Professor Supriyo Datta and Dr. Dipankar Saha are gratefully acknowledged by the authors.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)