Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structure

Dong Hyeok Lim, Ga Yeon Kim, Jin Ho Song, Kwang Sik Jeong, Dong Chan Kim, Seok Woo Nam, Mann Ho Cho, Tae Geol Lee

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

To investigate the reproducibility and I-V non-linearity characteristics in resistive-switching random-access memory (RRAM), we studied the switching characteristics through Pt/TiO2 interface control using a non-stoichiometric TiO2-x/TiN interface formation in a resistive switching Pt/TiO2/TiN stack. Using the TiO2-x/TiN interface instead of the TiO2/TiN interface induced nearly forming-free switching, decreased the reset current, suppressed the gradual reset process, and resulted in faster switching by electric pulse. These results indicate that the Pt/TiO2 interface experienced reduced oxygen-vacancy-mediated switching. The discrepancy between the reduced oxygen-vacancy-mediated switching and the initially large number of oxygen vacancies can be resolved via the oxygen vacancy distribution dependent field effect. To clarify this process, we performed reaction-diffusion-drift model simulations. The drift velocity, which was calculated using the vacancy distribution, described the dynamic movement, and the simulation results supported the experimentally observed faster switching response. The field effect, which provided successive feedback between the drift velocity and vacancy distribution, can potentially be exploited to generate vacancy-designed devices. This journal is

Original languageEnglish
Pages (from-to)221-230
Number of pages10
JournalRSC Advances
Volume5
Issue number1
DOIs
Publication statusPublished - 2015

Fingerprint

Electric field effects
Oxygen vacancies
Vacancies
Feedback
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Lim, D. H., Kim, G. Y., Song, J. H., Jeong, K. S., Kim, D. C., Nam, S. W., ... Lee, T. G. (2015). Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structure. RSC Advances, 5(1), 221-230. https://doi.org/10.1039/c4ra09443c
Lim, Dong Hyeok ; Kim, Ga Yeon ; Song, Jin Ho ; Jeong, Kwang Sik ; Kim, Dong Chan ; Nam, Seok Woo ; Cho, Mann Ho ; Lee, Tae Geol. / Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structure. In: RSC Advances. 2015 ; Vol. 5, No. 1. pp. 221-230.
@article{8cdd1bdce9ac42e39d40d76e9b85c5bc,
title = "Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structure",
abstract = "To investigate the reproducibility and I-V non-linearity characteristics in resistive-switching random-access memory (RRAM), we studied the switching characteristics through Pt/TiO2 interface control using a non-stoichiometric TiO2-x/TiN interface formation in a resistive switching Pt/TiO2/TiN stack. Using the TiO2-x/TiN interface instead of the TiO2/TiN interface induced nearly forming-free switching, decreased the reset current, suppressed the gradual reset process, and resulted in faster switching by electric pulse. These results indicate that the Pt/TiO2 interface experienced reduced oxygen-vacancy-mediated switching. The discrepancy between the reduced oxygen-vacancy-mediated switching and the initially large number of oxygen vacancies can be resolved via the oxygen vacancy distribution dependent field effect. To clarify this process, we performed reaction-diffusion-drift model simulations. The drift velocity, which was calculated using the vacancy distribution, described the dynamic movement, and the simulation results supported the experimentally observed faster switching response. The field effect, which provided successive feedback between the drift velocity and vacancy distribution, can potentially be exploited to generate vacancy-designed devices. This journal is",
author = "Lim, {Dong Hyeok} and Kim, {Ga Yeon} and Song, {Jin Ho} and Jeong, {Kwang Sik} and Kim, {Dong Chan} and Nam, {Seok Woo} and Cho, {Mann Ho} and Lee, {Tae Geol}",
year = "2015",
doi = "10.1039/c4ra09443c",
language = "English",
volume = "5",
pages = "221--230",
journal = "RSC Advances",
issn = "2046-2069",
publisher = "Royal Society of Chemistry",
number = "1",

}

Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structure. / Lim, Dong Hyeok; Kim, Ga Yeon; Song, Jin Ho; Jeong, Kwang Sik; Kim, Dong Chan; Nam, Seok Woo; Cho, Mann Ho; Lee, Tae Geol.

In: RSC Advances, Vol. 5, No. 1, 2015, p. 221-230.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO2/TiN structure

AU - Lim, Dong Hyeok

AU - Kim, Ga Yeon

AU - Song, Jin Ho

AU - Jeong, Kwang Sik

AU - Kim, Dong Chan

AU - Nam, Seok Woo

AU - Cho, Mann Ho

AU - Lee, Tae Geol

PY - 2015

Y1 - 2015

N2 - To investigate the reproducibility and I-V non-linearity characteristics in resistive-switching random-access memory (RRAM), we studied the switching characteristics through Pt/TiO2 interface control using a non-stoichiometric TiO2-x/TiN interface formation in a resistive switching Pt/TiO2/TiN stack. Using the TiO2-x/TiN interface instead of the TiO2/TiN interface induced nearly forming-free switching, decreased the reset current, suppressed the gradual reset process, and resulted in faster switching by electric pulse. These results indicate that the Pt/TiO2 interface experienced reduced oxygen-vacancy-mediated switching. The discrepancy between the reduced oxygen-vacancy-mediated switching and the initially large number of oxygen vacancies can be resolved via the oxygen vacancy distribution dependent field effect. To clarify this process, we performed reaction-diffusion-drift model simulations. The drift velocity, which was calculated using the vacancy distribution, described the dynamic movement, and the simulation results supported the experimentally observed faster switching response. The field effect, which provided successive feedback between the drift velocity and vacancy distribution, can potentially be exploited to generate vacancy-designed devices. This journal is

AB - To investigate the reproducibility and I-V non-linearity characteristics in resistive-switching random-access memory (RRAM), we studied the switching characteristics through Pt/TiO2 interface control using a non-stoichiometric TiO2-x/TiN interface formation in a resistive switching Pt/TiO2/TiN stack. Using the TiO2-x/TiN interface instead of the TiO2/TiN interface induced nearly forming-free switching, decreased the reset current, suppressed the gradual reset process, and resulted in faster switching by electric pulse. These results indicate that the Pt/TiO2 interface experienced reduced oxygen-vacancy-mediated switching. The discrepancy between the reduced oxygen-vacancy-mediated switching and the initially large number of oxygen vacancies can be resolved via the oxygen vacancy distribution dependent field effect. To clarify this process, we performed reaction-diffusion-drift model simulations. The drift velocity, which was calculated using the vacancy distribution, described the dynamic movement, and the simulation results supported the experimentally observed faster switching response. The field effect, which provided successive feedback between the drift velocity and vacancy distribution, can potentially be exploited to generate vacancy-designed devices. This journal is

UR - http://www.scopus.com/inward/record.url?scp=84919754134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84919754134&partnerID=8YFLogxK

U2 - 10.1039/c4ra09443c

DO - 10.1039/c4ra09443c

M3 - Article

AN - SCOPUS:84919754134

VL - 5

SP - 221

EP - 230

JO - RSC Advances

JF - RSC Advances

SN - 2046-2069

IS - 1

ER -